Inspection method, apparatus and system for circuit pattern

ABSTRACT

Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.

BACKGROUND OF THE INVENTION

[0001] The invention relates to inspection method, apparatus, and systemfor a fine circuit pattern of a semiconductor device, a photomask, areticle, a liquid crystal, or the like.

[0002] An inspection of a semiconductor wafer will now be described asan example.

[0003] A semiconductor device is formed by repeating a step oftransferring a circuit pattern formed on a photomask to a semiconductorwafer by a lithographing process and an etching process. A state of theprocess, the presence or absence of generation of a foreign matter(particles), and the like in the manufacturing step of the semiconductordevice largely exercise an influence on a manufacturing yield of thesemiconductor device. To detect them early or preparatorily, a method ofinspecting the circuit pattern of the semiconductor wafer in themanufacturing step of the semiconductor device has conventionally beenused.

[0004] As an apparatus for inspecting a defect existing in the circuitpattern of the semiconductor wafer, a defect inspection apparatus of awafer with a pattern such that white light is irradiated to asemiconductor wafer and a plurality of circuit patterns of the same kindare compared by using an optical image has been put into practical use.The outline of the inspection method has been disclosed in “MonthlySemiconductor World”, Vol. August issue, pp. 96-99, 1995. According tothe inspection method using the optical image, as disclosed inJP-A-3-167456, there has been disclosed a system such that an opticallyirradiated region on a wafer substrate is formed as an image by a timedelay integrating sensor and characteristics of the image are comparedwith design characteristics which have previously been inputted, therebydetecting a defect. On the other hand, since the detection of a defectby the optical image is becoming difficult in association with thereduction in size of a circuit pattern, complication of a shape, andvariation of material, a method of inspecting a circuit pattern by usingan electron beam image whose resolution is higher than that of theoptical image has been proposed.

[0005] A scanning electron microscopy (hereinafter, abbreviated to SEM)has been known as an apparatus for irradiating an electron beam to asample and observing it. To obtain a practical inspection time in caseof inspecting a circuit pattern formed on a semiconductor wafer by anelectron beam image, it is necessary to obtain an image at a speed thatis much higher than that of the SEM. It is also necessary tosimultaneously assure a resolution of the image obtained at a high speedand an S/N ratio of the image.

[0006] As an inspection apparatus for a circuit pattern using anelectron beam, a method whereby an electron beam having an electron beamcurrent that is 100 or more times (10 nA or more) as large as that ofthe ordinary SEM is irradiated to an electrically conductive substratesuch as an X-ray mask or the like, any of secondary electrons, reflectedelectrons, and transmitted electrons which are generated are detected,and images formed from resultant signals are compared and inspected,thereby automatically detecting a defect has been disclosed in “Journalof Vacuum Science Technology B” (J. Vac. Sci. Tech. B), Vol. 9, No. 6,pp. 3005-3009, (1991), “J. Vac. Sci. Tech. B”, Vol. 10, No. 6, pp.2804-2808, (1992), JP-A-5-258703, and U.S. Pat. No. 5,502,306. Accordingto such a method, the inspection of a fine circuit pattern is executedby the automatic wafer appearance inspection of an electron beamscanning system whose defect detecting performance is superior to thatof the optical appearance inspection, and various kinds of defectsoccurring in a circuit pattern forming step can be detected.

[0007] In the above defect inspection, although the images of theadjacent similar circuit patterns are formed and compared to therebyautomatically detect a defect, in the inspection, it is necessary tocope with wafers of various pattern layouts or patterns of variousmaterials. To accurately compare the adjacent patterns, it is necessaryto previously obtain a layout of the pattern, namely, a layout of a chip(or die) or shot on the wafer and register it as an inspecting conditionof the wafer to be inspected (hereinafter, referred to as aninspection-subject wafer). To form an image suitable for inspection invarious materials, it is necessary to set brightness of the image and acontrast of the pattern or a background to proper values and registerthem as inspecting conditions of the inspection-subject wafer. In theabove conventional apparatus, however, there is no disclosure about aprocedure for setting the inspecting conditions and an operating method,and it takes one to several hours to fully set the proper inspectingconditions with respect to a wafer whose operation is complicated andwhich newly becomes a target of inspection. In a semiconductormanufacturing line, since a pattern inspection is executed with regardto a plurality of products (namely, a plurality of circuit patternlayouts) and a plurality of steps (namely, a plurality of materials anda plurality of detailed circuit pattern shapes), it is necessary to seta large number of inspecting conditions, so that there is a problem thatit takes an extremely long time for various operations in theinspection, particularly, for the inspecting condition settingoperations.

[0008] To solve the above problem, as a technique such that a dataprocess and parameter setting can be executed in parallel simultaneouslywith the inspecting operation, a method of transmitting and receivingsignals between an operating portion and a mechanism portion for settingdata processing parameters simultaneously with the inspection and amechanism portion has been disclosed in JP-A-63-32604. According to sucha method, however, although there is a disclosure about the signaltransmission and reception, there is not a disclosure regarding theoperability and a data structure for parameters with respect to acomplicated inspection apparatus in which the number of input parametersis large.

[0009] In various inspections of the system for obtaining an image of acircuit pattern of a substrate and comparing it with an adjacent similarpattern, it is necessary that a layout of the circuit pattern formed onthe wafer substrate, namely, a layout of a shot, a layout of a chip (ordie) in it, and further, a layout of memory cells, peripheral circuits,logic circuits, test patterns, or the like in it are preliminarily setas inspecting conditions. It is, further, necessary to set conditions ofthe irradiation light, detecting conditions, image comparing conditions,defect discriminating conditions, and the like in accordance with adetailed shape and a material of the pattern of an inspection-subjectwafer. Each time processing conditions of a semiconductor device arechanged, it is also necessary to properly change those conditions.

[0010] There are the following problems in such a case. For example,when many parameters are sequentially inputted and set, although anoperating picture plane is sequentially switched in accordance with theinput, the operator cannot know the switching order and items which areswitched. Therefore, even with respect to the items which do not need tobe inputted, the picture plane is shifted to the next picture planeafter they are once displayed on the picture plane and confirmed, sothat an efficiency is low.

[0011] There are also problems such that when the data which has alreadybeen inputted is confirmed again or inputted, the present picture planecannot be returned to the previous picture plane or, since the presentinput stage is obscure, the layer of the picture plane to be returned isunknown, so that the present picture plane cannot be returned to theprevious picture plane unless many operations are performed, and thelike.

[0012] In still another conventional apparatus, although a plurality ofparameter input picture planes can be displayed on a workstation foroperation by a window format, since a plurality of windows areoverlapped and displayed even in such a system, the operator cannot seethe information of the picture plane hidden behind the present pictureplane, and it is difficult to perform the selecting operation on thepicture plane.

[0013] Due to the above problems, since it is necessary to form such alarge number of input items every kind and step as mentioned above, evenif a speed of the inspection itself is high, an efficiency forpreparation is low and it takes a long time. It is, therefore, difficultto apply the inspection to a new product and a new step at an earlystage.

[0014] When the inspecting conditions are set, since they have to be setby using the inspection apparatus, the inspection time consequentlybecomes short and the throughput deteriorates.

[0015] Even if the inspecting speed is raised, if the subsequentconfirmation by the eyes is performed by the same inspection apparatus,a time which can be taken for inspection decreases and, if the operatorintends to visually confirm in an apparatus for confirmation by theeyes, it is troublesome to convey the substrate and a method ofexchanging data between the apparatuses is complicated, so that there isa problem of deterioration of the throughput.

SUMMARY OF THE INVENTION

[0016] It is the first object of the invention to provide inspectionmethod, apparatus, and system for a circuit pattern, in which in thecase where a defect such as abnormality of a pattern which is generatedin a fine circuit pattern, remainder or deposition of a foreign matter,or the like is inspected by using an image formed by irradiating whitelight, a laser beam, or a charged particle beam, when various conditionsnecessary for the inspection are set, its operating efficiency can beimproved.

[0017] The second object of the invention is to provide inspectionmethod, apparatus, and system for a circuit pattern having an operatingpicture plane display method or an operating picture plane layout forimproving the operability at the time of setting of the inspectingconditions.

[0018] The third object of the invention is to provide inspectionmethod, apparatus, and system for a circuit pattern, in which aninspection time can be reduced and a manufacturing yield can be improvedowing to an early investigation of causes of a failure of asemiconductor device.

[0019] To accomplish the above objects, the present invention has thefollowing constructions.

[0020] First, according to the invention, an inspection target region ofan inspection-subject substrate is displayed and a map picture planewhich is designated and an image of an optical microscope or an electronbeam microscope of a designated region are displayed in parallel,thereby enabling a defect distribution and a defective image to besimultaneously seen.

[0021] Second, according to the invention, inspecting condition itemnames and a picture plane to display, input, or instruct the contents ofthe inspecting conditions are integrated, the contents are overlapped tothe picture plane and layer-displayed, all item names are arranged anddisplayed in the upper region of the picture plane of the contents by atab format, and when a desired item name is clicked, the picture planeis switched and the contents corresponding to the item name aredisplayed on the switched new picture plane.

[0022] Third, according to the invention, tabs showing the item namesare sequentially arranged in order of operations, and the tabcorresponding to the picture plane which is at present being operated isdisplayed by a color or a display style which is different from that ofthe other tabs. Thus, a procedure of the ordinary operations isdisplayed as a layout and the tab on the picture plane in whichparameters are at present being inputted is displayed in a mannerdifferent from the tab on each of the other picture planes, therebyenabling the operator to recognize at which stage in the whole operationthe present operation is.

[0023] Fourth, according to the invention, the apparatus has a monitorfor sequentially or arbitrarily displaying: a recipe set picture planeto set inspecting conditions; a trial inspection picture plane forobtaining an image by irradiating the light, laser beam, or chargedparticle beam to a part of a region on the inspection-subject substrateon the basis of the recipe before the actual inspection and confirmingthe recipe; and an inspecting picture plane for executing the actualinspection of a predetermined region on the inspection-subject substrateand displaying a resultant image.

[0024] Fifth, according to the invention, the apparatus has a pictureplane which can be set so as to irradiate the light, laser beam, orcharged particle beam only to a necessary region without irradiating itto the whole surface of the inspection-subject substrate.

[0025] Sixth, according to the invention, an image from an externalapparatus can be displayed on the monitor of the inspection apparatusfor extracting a defect of the inspection-subject substrate.

[0026] Seventh, according to the invention, among the manufacturingsteps of the circuit pattern of the inspection-subject substrate, thedefect is classified on the basis of a defect increase ratio due to adefect extracting inspection in a halfway step, a yield ratio due to anelectric conduction inspection after the final step, and a history of aprocessing apparatus of each manufacturing step.

[0027] Eighth, according to the invention, an inspection apparatus forextracting the defect of the inspection-subject substrate and anobserving apparatus for observing the defect are connected, therebyallowing coordinates on the substrate to be made common or have acompatibility.

BRIEF DESCRIPTION OF THE DRAWINGS

[0028]FIG. 1 is a constructional diagram of an inspection system;

[0029]FIG. 2 is a vertical sectional view of a circuit patterninspection apparatus;

[0030]FIG. 3 is a constructional diagram of an interface;

[0031]FIG. 4 is a flowchart showing a main inspecting procedure;

[0032]FIG. 5 is a flowchart showing a manufacturing process of asemiconductor device;

[0033]FIG. 6 is a layout diagram of an initial state of a picture plane;

[0034]FIG. 7 is a constructional diagram showing a relation of layers ofparameters;

[0035]FIG. 8 is a flowchart of a recipe forming mode;

[0036]FIG. 9 is a diagram showing a recipe input picture plane;

[0037]FIG. 10 is a layout diagram showing an example of a picture planeof the inspection apparatus;

[0038]FIG. 11 is a flowchart showing a part of a step file forming flow;

[0039]FIG. 12 is a flowchart showing a recipe forming procedure;

[0040]FIG. 13 is a diagram showing a picture plane in the recipe formingmode;

[0041]FIG. 14 is a flowchart showing the recipe forming procedure;

[0042]FIG. 15 is a diagram of a part of the picture plane in the recipeforming mode;

[0043]FIG. 16 is a flowchart showing a recipe forming procedure;

[0044]FIG. 17 is a flowchart showing a recipe forming procedure;

[0045]FIG. 18 is a flowchart showing a displaying and setting procedureof an inspection region;

[0046]FIG. 19 is a conceptual diagram showing a setting method of a cellregion;

[0047]FIG. 20 is a conceptual diagram showing a setting method of a cellregion;

[0048]FIG. 21 is a conceptual diagram showing a setting method of a cellregion;

[0049]FIG. 22 is a diagram showing a trial inspection picture plane;

[0050]FIG. 23 is a diagram showing a graph display image of a defect;

[0051]FIGS. 24A to 24C are diagrams showing inspection regions eachshowing the number of scans of an electron beam:

[0052]FIG. 25 is a diagram showing a final trial inspection pictureplane;

[0053]FIG. 26 is a diagram showing a picture plane when a defect isconfirmed;

[0054]FIG. 27 is a flowchart showing an inspecting procedure;

[0055]FIG. 28 is a diagram showing a picture plane in an inspectingmode;

[0056]FIG. 29 is a diagram showing a picture plane in an inspectingmode;

[0057]FIG. 30 is a diagram showing a picture plane in an inspectingmode;

[0058]FIG. 31 is a diagram showing a picture plane in an inspectingmode;

[0059]FIG. 32 is a diagram showing a picture plane in a defectconfirming mode;

[0060]FIG. 33 is a diagram showing a picture plane in a defectconfirming mode;

[0061]FIG. 34 is a diagram showing a,picture plane in a utility mode;

[0062]FIG. 35 is a step diagram of an inspection system;

[0063]FIG. 36 is a constructional diagram of the inspection system; and

[0064]FIG. 37 is a constructional diagram of the inspection system.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0065] Embodiments of the invention will now be described hereinbelowwith reference to the drawings.

[0066] The first embodiment of the invention will be first describedhereinbelow with respect to an example of a circuit pattern inspectionapparatus in which images obtained by irradiating a charged particlebeam, particularly, an electron beam to adjacent circuit patterns on asemiconductor wafer are compared to thereby detect the presence orabsence of a defect of the circuit pattern.

[0067] A “cell region” which will be used hereinbelow denotes one unitof a region serving as a target of an inspection and changes inaccordance with an inspecting request of the user within a range from acase where it denotes each chip on the wafer to a case where it denotesa specific processing region in the chip. In the invention, anindividual region as well as an inspection requesting region of the useris generally called a cell region.

[0068] A construction of the circuit pattern inspection apparatus in theembodiment is shown in FIG. 2. FIG. 2 is a vertical sectional view ofthe circuit pattern inspection apparatus, and a control portion and anoperating portion are further added as functional block diagrams.

[0069] A circuit pattern inspection apparatus 16 has an inspectionchamber 17 in which the internal air is vacuum evacuated and a sparechamber (not shown in the embodiment) to convey an inspection-subjectsubstrate (substrate to be inspected) 24 as a sample into the inspectionchamber 17. The spare chamber is constructed so that a vacuum evacuationcan be performed independently of the inspection chamber 17. The circuitpattern inspection apparatus 16 comprises a control portion 21 and anoperating portion 20 besides the inspection chamber 17 and the sparechamber.

[0070] The inspection chamber 17 is mainly constructed by an electronicoptical system 18, a secondary electron detector 35, a sample chamber23, and an optical microscope 19. The electronic optical system 18comprises: an electron gun 25; an electron beam extracting electrode 26;a condenser lens 27; a blanking deflector 28; a scanning deflector 30;an aperture 29; an objective lens 31; a reflection plate 32; and anE-cross-B deflector (ExB deflector) 33.

[0071] The sample chamber 23 comprises: a sample stage 45; an X stage 46and a Y stage 47 serving as stages; a position monitor length measuringdevice 48; and a height measuring device 49 of the inspection-subjectsubstrate. The optical microscope 19 is equipped at a position that isclose to the electronic optical system 18 in the inspection chamber 17but away from the system 18 by a distance such that it does not mutuallyexercise an influence. A distance between the electronic optical system18 and optical microscope 19 has already been known. The X stage 46 or Ystage 47 reciprocates at the known distance between the electronicoptical system 18 and optical microscope 19. The optical microscope 19is constructed by a white light source 50, an optical lens 51, and a CCDcamera 52. The white light source 50, CCD camera 52, and the like can beinstalled outside of the inspection chamber 17 which was vacuumevacuated.

[0072] An electron beam 34 is extracted from the electron gun 25 byapplying a voltage to a space between the electron gun 25 and electronbeam extracting electrode 26. The electron beam 34 is accelerated byapplying a negative electric potential of a high voltage to the electrongun 25. Thus, the electron beam 34 progresses in the direction of thesample stage 45 so as to have an energy corresponding to the appliedelectric potential, is converged by the condenser lens 27, furtherfinely converged by the objective lens 31, and is irradiated onto theinspection-subject substrate 24 put on the X stage 46 and Y stage 47 onthe sample stage 45. The inspection-subject substrate 24 is a substratehaving a fine circuit pattern such as semiconductor wafer, chip, liquidcrystal, mask, or the like.

[0073] A signal generator 59 for generating a scanning signal and ablanking signal is connected to the blanking deflector 28. A lens powersource 70 is connected to each of the condenser lens 27 and objectivelens 31. A negative voltage can be applied to the inspection-subjectsubstrate 24 by a high voltage power source 73. By adjusting the voltageof the high voltage power source 73, a primary electron beam isdecelerated and an electron beam irradiation energy to theinspection-subject substrate 24 can be adjusted to an optimum valuewithout changing the electric potential of the electron gun 25.

[0074] Secondary electrons 71 generated by irradiating the electron beam34 onto the inspection-subject substrate 24 is accelerated by thenegative voltage applied to the inspection-subject substrate 24. TheE-cross-B deflector 33 is arranged above the inspection-subjectsubstrate 24. The secondary electrons 71 accelerated by the deflector 33are deflected in a predetermined direction. A description of theprinciple of the E-cross-B deflector 33 is omitted here because it hasbeen disclosed in JP-A-60-47358 or JP-A-60-212953 (U.S. Pat. No.4,658,136). A deflection amount of the secondary electrons 71 can beadjusted by intensities of an electric field and a magnetic field whichare applied to the E-cross-B deflector 33. The electric field and themagnetic field can be varied in an interlocking relational manner withthe negative voltage applied to the inspection-subject substrate 24.

[0075] The secondary electrons 71 deflected by the E-cross-B deflector33 collide with the reflection plate 32 under a predetermined condition.When the secondary electrons 71 collide with the reflection plate 32,second secondary electrons 72 having an energy of a few eV to 50 eV aregenerated from the reflection plate 32.

[0076] A detecting portion of the secondary electrons is constructed ina manner such that the secondary electron detector 35 is arranged overthe objective lens 31 in the vacuum evacuated inspection chamber 17 andthat a preamplifier 36, an A/D converter 37, light converting means 38,light transmitting means 39, electric converting means 40, a highvoltage power source 41, a preamplifier drive power source 42, an A/Dconverter drive power source 43, and a reverse bias power source 44 arearranged outside of the inspection chamber 17. The secondary electrondetector 35, preamplifier 36, A/D converter 37, light converting means38, preamplifier drive power source 42, and A/D converter drive powersource 43 are floated to a positive electric potential by the highvoltage power source 41.

[0077] The second secondary electrons 72 are led to the secondaryelectron detector 35 by a suction electric field which is generatedbecause the secondary electron detector 35 is floated to the positiveelectric potential. The secondary electron detector 35 detects thesecond secondary electrons synchronously with the timing when theelectron beam 34 scans the inspection-subject substrate 24. An outputsignal of the secondary electron detector 35 is amplified by thepreamplifier 36 arranged outside of the inspection chamber 17 andconverted to digital data by the A/D converter 37. After an analogsignal detected by the secondary electron detector 35 was amplified bythe preamplifier 36, the A/D converter 37 immediately converts it to adigital signal and transmits it to the operating portion 20 via thecontrol portion 21. Since the detected analog signal is digitized andtransmitted just after the detection, a signal of a higher speed and ahigher S/N ratio (signal-to-noise ratio) than those of the conventionalapparatus can be obtained.

[0078] The inspection-subject substrate 24 is put on the X stage 46 andY stage 47. When an inspection is executed, either a two-dimensionalscanning method or a one-dimensional scanning method is selected. Thatis, in the 2-dimensional scanning method, the X stage 46 and Y stage 47are held at rest and the electron beam 34 is repetitively scanned in theX direction to thereby deflect them in the Y direction or it isrepetitively scanned in the Y direction to thereby deflect them in the Xdirection. In the 1-dimensional scanning method, while the Y stage 47 iscontinuously moved at a predetermined speed in the Y direction, theelectron beam 34 is repetitively scanned in the X direction, or whilethe X stage 46 is continuously moved at a predetermined speed in the Xdirection, the electron beam 34 is repetitively scanned in the Ydirection. In case of inspecting a specific relatively small region, itcan be more efficiently inspected by the former method. In case ofinspecting a relatively wide region, it can be more efficientlyinspected by the latter method. The electron beam 34 is deflected by theblanking deflector 28 and controlled so as not to pass through theaperture 29.

[0079] An operating command and operating conditions of each portion ofthe apparatus are inputted and outputted to/from the control portion 21.A plurality of conditions such as acceleration voltage at the time ofgeneration of the electron beam, deflection width of the electron beam,deflecting speed, signal fetching timing of the secondary electrondetecting apparatus, sample stage moving speed, and the like arepreviously selected and inputted into the control portion 21 inaccordance with the object. A correction control circuit 58 monitorsdeviations of the positions and heights of the inspection-subjectsubstrate 24 and electron beam 34 from detection signals of the positionmonitor length measuring device 48 and inspection-subject substrateheight measuring device 49. The control portion 21 forms a correctionsignal from a result of the monitoring and sends the correction signalto the lens power source 70 and the scanning deflector 30 so that theelectron beam 34 is always irradiated to the correct position.

[0080] The control portion 21 comprises: memory means 81 for storing thesignal obtained by converting the analog signal from the secondaryelectron detector 35 into the digital signal; an image processingcircuit 82 for digitally processing the digital signal stored in thememory means 81; an inspecting condition setting portion 83 to setprocessing parameters as inspecting conditions of the image processingcircuit 82; a defect data buffer 84 to hold defect information as aprocessing result of the image processing circuit 82; and a wholecontrol portion 85 to control the whole apparatus. The image processingcircuit 82 stores images and compares the two images, thereby extractinga defect.

[0081] The electron beam 34 which was finely converged is irradiatedonto the inspection-subject substrate 24, thereby generating thesecondary electrons 71. The secondary electrons 71 or the secondsecondary electrons 72 are detected synchronously with the scan of theelectron beam 34 and the movement of the X stage 46 and y stage 47, sothat an image of the inspection-subject substrate 24 is obtained. In thecircuit pattern inspection apparatus of the embodiment, theinspection-subject substrate 24 is scanned only once by the electronbeam 34 of a large current which is about 100 or more times as large asthat of the ordinary SEM, for example, 100 nA, so that the image isformed. Thus, the high speed image fetching can be realized. Forobservation of a defect, the current of the electron beam 34, theacceleration voltage, and the number of scanning times can be changed.

[0082] A thermal field emission electron source of a diffusion supplytype is used for the electron gun 25. By using the electron gun 25, thecurrent of the electron beam that is more stable than that ofconventional electron source such as tungsten filament electron sourceor cold field emission electron source can be assured. Thus, an image ofthe electron beam in which a brightness fluctuation is small is obtainedand the current of the electron beam can be set to a large value. To setthe electron beam current to a large value, a Schottky type electronsource can be used for an electron gun. By using such an electron gun,the high speed inspection which can obtain an electron beam image of ahigh S/N ratio (signal-to-noise ratio) by the one scan can be realized.

[0083] In the embodiment, a length measuring device using a laserinterference is used as a position monitor length measuring device 48.Thus, the positions of the X stage 46 and Y stage 47 can be monitored atreal-time and obtained position information is transmitted to thecontrol portion 21. On the basis of the information, the control portion21 can accurately grasp the region or position where the electron beam34 is irradiated. A positional deviation of the irradiating position ofthe electron beam 34 can be corrected as necessary by the correctioncontrol circuit 58 at real-time. When there are a plurality ofinspection-subject substrates 24, regions to which the electron beam 34was irradiated can be individually stored.

[0084] An optical measuring device, for example, a laser interferencemeasuring device or a reflected light type measuring device formeasuring a change in height by monitoring the position of the reflectedlight is used as a height measuring device 49 of the inspection-subjectsubstrate. The height of inspection-subject substrate 24 put on the Xstage 46 and Y stage 47 can be measured at real-time. In the embodiment,the reflected light type measuring device is used, the elongated whitelight which passed through a slit is irradiated onto theinspection-subject substrate 24 via a transparent window, a position ofthe reflected light is detected by a position detector, and a changeamount of the height is calculated from a fluctuation of the position.

[0085] According to the present apparatus, a focal distance of theobjective lens 31 to finely converge the electron beam 34 is dynamicallycorrected on the basis of measurement data of the height measuringdevice 49 of the inspection-subject substrate, and the electron beam 34whose focal point is always matched to the inspection region can beirradiated. A warp and a height distortion of the inspection-subjectsubstrate 24 are preliminarily measured before the irradiation of theelectron beam and correcting conditions of every inspection region ofthe objective lens 31 are set on the basis of measurement data.

[0086]FIG. 3 shows the operating portion 20 and is a constructionaldiagram of an interface with the user or operator. As shown in thediagram, the operating portion 20 comprises a monitor 95, a keyboard 96,a mouse 97, and a control portion 98. A map portion 87 to display chipsor cells on the inspection-subject substrate 24 by a form of map, animage display portion 88 to display the electron beam image or the imageinformation obtained by the optical microscope 19, an image obtaininginstructing portion 89, an image processing instructing portion 90, anda processing condition setting portion 91 are displayed on the screen ofthe monitor 95. Any of an electron beam image obtained by the secondaryelectron detector 35, an optical image photographed by the CCD camera52, a differential image obtained after it was comparison processed bythe image processing circuit 82, and the like is arbitrarily selectedand displayed in the image display portion 88.

[0087] The present position of the stage is displayed in the map portion87. An optical microscope image of the optical microscope 19 isdisplayed on the image display portion 88. The operator clicks anarbitrary portion on the inspection-subject substrate 24 displayed inthe map portion 87 by a mouse 97 or the like, so that a position to beinspected can be designated by moving the X stage 46 and Y stage 47. Theexecution of the inspection can be instructed by clicking a buttondisplayed in the image obtaining instructing portion 89.

[0088] The operator sets inspecting conditions of the inspectingcondition setting portion 83 by a button displayed in the processingcondition setting portion 91. An image process in the image processingcircuit 82 of the digital image stored in the memory means 81 is set bya button displayed in the image processing instructing portion 90. Theimage of the defect stored in the defect data buffer 84 is madecorrespond to the position designated by the map portion 87 andenlargedly displayed in the image display portion 88. The operatorrepetitively clicks the map portion 87 and can discriminate whether thedefect to be detected has been detected and the surplus defects are notdetected or not.

[0089] As a result of the discrimination, if the inspecting conditionsare improper, the processing conditions are set again by the processingcondition setting portion 91 and the inspection is executed by the imageprocessing instructing portion 90. By repeating those operations, theinspecting conditions suitable for the inspection can be searched.

[0090] When the confirmation of the condition at one position isfinished, the operator reduces and displays the map portion 87 asnecessary, switches the image display portion 88 to the opticalmicroscope image display in the optical microscope 19, selects again thecondition setting position, and repeats the operations in a range fromthe image obtaining to the condition setting. The condition setting ofthe operator can be supported by those operations.

[0091] An inspecting procedure is classified into a recipe forming mode,an inspecting mode, and a defect confirming mode. FIG. 4 is a flowchartshowing a main procedure of the inspection in the circuit patterninspection apparatus shown in the first embodiment. Instructing buttonsof those modes are always displayed on the screen of the monitor 95. Therecipe forming mode includes steps 1 to 3. First, a kind file and a stepfile for inputting various data that is peculiar to a wafer and variousdata during the manufacturing process are set (step 1). Subsequently,inspecting conditions such as cell region setting, inspection regionsetting, and the like are set (step 2). A trial inspection such that anelectron beam is irradiated to only a part of the wafer and theinspection is simulated in accordance with preset inspecting conditionsand inspecting conditions are determined is executed (step 3). Theactual inspection is executed in the inspecting mode (step 4). Thedefect extracted by the inspection is confirmed in the defect confirmingmode (step 5).

[0092] If the inspecting conditions have already been set and there isno need to change them, the operator selects the inspecting mode withoutperforming the above procedure (step 6), confirms the inspectingconditions or resets them as necessary (step 7), and executes theinspection.

[0093] In the circuit pattern inspection apparatus according to theinvention, instructions in those steps are inputted from the pictureplane. Although a series of operations is fundamentally performed inaccordance with this procedure, the order of the steps can be exchangedor the steps can be omitted.

[0094] The inspection-subject substrates to which the inspection methodor apparatus according to the invention is applied are mainly classifiedinto two kinds. One is a wafer during the manufacturing step of asemiconductor device and the other is a mask, reticle, or the like whichis used in the manufacturing of a semiconductor device. Amongsemiconductor device products, the invention can be mainly applied tovarious products such as product mainly comprising a memory circuit,logic circuit product, bipolar memory, logic product, BiCMOS product,microprocessor product, and the like. Among the masks and reticles, theinvention can be applied to various masks and reticles such asphase-shift reticle, mask for X-ray exposure, reticle for excimerexposure, and the like.

[0095] Although a case where a wafer is used as an inspection-subjectsubstrate will be explained as an example in the following embodiments,even in case of the mask and reticle, the subject matter of the presentinvention is not changed and a similar inspection can be performedmerely by changing the details shown in the embodiment.

[0096]FIG. 5 is a flowchart showing the manufacturing process of asemiconductor device. As shown in the diagram, the process for thesemiconductor device starts from a wafer deposition and surfaceoxidation step (step 61) and is constructed by a plurality of steps(step 62). A pattern forming step among those steps is further finelydivided. The pattern forming step mainly comprises steps of: a filmdeposition (step 63); a photosensitive resist coating (step 64);sensitizing (step 65); a development (step 66); etching (step 67); aresist removal (step 68); and cleaning (step 69). Since thesemiconductor device comprises multilayer film deposition steps, thesame steps as those steps are repeated many times. If the manufacturingconditions are not optimized in the above steps, an inconvenience suchthat a circuit pattern of the semiconductor device which is formed onthe wafer is not normally formed occurs. Therefore, it is necessary toprovide automatic appearance inspecting steps (steps 11 and 12) afterthe step in which a state of the device cannot be confirmed later.

[0097] The circuit pattern inspection apparatus according to theinvention has the procedure shown in FIG. 4, and the following contentsare displayed on the screen of the monitor in order to execute theprocedure, thereby making it easy to perform the operation of theoperator and reducing the inspection time.

[0098] The second embodiment of the invention will now be describedhereinbelow. FIG. 6 is a layout diagram of an initial state of a pictureplane which is displayed on the monitor 95 shown in FIG. 3. A timedisplay region 101, an apparatus ID display region 102, an inspectiontarget substrate name display region 103, an operator name displayregion 104, and a message region 105 for displaying various messages arearranged in the top portion of the picture plane. In the lower portionof the picture plane, there are arranged: an “inspect” button 106 todesignate the inspecting mode for instructing the start of inspection; a“confirm defect” button 107 to designate the defect confirming mode forinstructing the confirmation of a defect; a “form recipe” button 108 todesignate the recipe forming mode for instructing the formation of arecipe to preset inspecting conditions; a “utility” button 109 todesignate the utility mode for instructing calling of an auxiliaryfunction; and a “system end” button 110 to instruct the end of system.

[0099] Since the inspection is executed on the basis of the contents ofthe recipe, the operator needs to form a recipe at first. If thecontents of the recipes at the second and subsequent times are the sameas those of the recipe at the first time, there is no need to newly formthem.

[0100] Various parameters which are necessary to execute the inspectionin the embodiment will be shown below.

[0101]FIG. 7 is a constructional diagram showing the relation of layersof the parameters. As parameters to execute the inspection, there areparameters which are peculiar to the wafer, parameters to decide theoperating conditions of the apparatus, and the like. The parameterswhich are peculiar to the wafer are mainly classified into two kinds.One is parameters 75 and 76 called “kind files” and they are parameterswhich are not changed depending on the layer during the manufacturingprocess. The contents are, for example, a wafer size, a shape oforientation flat or notch, an exposure shot size of the semiconductorproduct, a chip size or die size, a layout of shots and chips, a shotand a chip as valid regions of the inspection region, the number of thechip serving as an origin, the number of memory cell regions,coordinates of each region, a size of a repetition unit of the memorycells, and the like.

[0102] The above contents are constructed as a table of “kind file”. Theother is parameters 77 and 78 called “step files” and they areparameters which need to be adjusted because materials of the surfacesand states of shapes are different depending on the layer during themanufacturing process steps. Those contents are, for example, electronbeam irradiating conditions, various gains and offset values of adetecting system, gradation conversion values to adjust the brightnessof an image of each sample, coordinates and an image of an alignmentmark to execute an alignment, inspection region conditions such as chipin which the inspection is performed or region in the chip, samplingrate, or the like, a pixel size upon inspection, conditions of an imageprocess to detect the defect, the number of allowable defects or adefect density to execute a discrimination about a state of the wafer,the number of failure-generated chips or a failure-generated chip ratio,and the like. The electron beam irradiating conditions are anirradiating energy when the electron beam is irradiated to the sampleand the like. The conditions for the image processes to detect thedefect are a selection of a fixed threshold value or a floatingthreshold value, a filter at the time of image input or processes, adeviation allowable value of the position matching, a variationallowable value of brightness at the time of image comparison, and thelike. Those parameters have been registered as “step files”.

[0103] Upon inspection, the operator designates the “kind file” and“step file” and calls them, so that he can call the inspectingconditions corresponding to a specific semiconductor product or aspecific manufacturing step.

[0104] The “kind file” and “step file” are collectively called a“recipe”. A series of operations for inputting and registering thosevarious parameters is called “form recipe”.

[0105] In the conventional inspection apparatus, the “kind file”obtained by forming a table from common information regarding a specificsemiconductor device product and the “step file” obtained by forming atable from the information that is peculiar to individual inspectingstep are not properly separated. Therefore, for instance, with respectto the specific semiconductor product, even if the inspecting conditionshave already been set for the wafer in the other step, there is aproblem such that when the inspecting conditions in another step areset, it is difficult to use the conditions which have already beenformed in common. For example, it is necessary to input again theparameters which are common in the same kind, for example, the settingof a region of the chip matrix or memory cells or the like each time theinspecting step changes. In the invention, the “kind file” and “stepfile” are properly separated as mentioned above and a file structuresuch that a plurality of step files are provided at a level lower thanthat of the kind file with respect to one semiconductor product is setas shown in FIG. 7. Therefore, for example, when inspecting conditionsof wafers whose steps differ in the same product are set, the conditionscan be used in common with respect to the parameters such as a chip sizeand the like which are common in a specific product among the inspectionfiles which have already been formed. A troublesomeness such that thesame parameters are set and inputted many times can be made unnecessary.Further, since the operation on the picture plane becomes easy, aforming efficiency of the inspecting conditions can be raised.

[0106]FIG. 8 is a flowchart in the recipe, forming mode. The recipeforming mode can be designated by clicking the “form recipe” button 108shown in FIG. 6 by the mouse or the like. In the recipe forming mode,important steps are the cell region setting, inspection region setting,trial inspection, and final trial inspection.

[0107] First, the operator inputs the parameters such as kind file, stepfile, and the like mentioned above and conditions which are necessary toexecute the inspection from the picture plane (step 201) and loads thewafer as an inspection-subject substrate 24 (step 202). Subsequently, acontrast as a condition of the electronic optical system is set (step203). A matrix for setting layout information of the wafer is set (step204). An alignment to measure a layout of the wafer is set and analignment to perform a trial of the alignment is set (step 205). A cellregion setting to designate a memory cell region of the wafer isperformed (step 206). An inspection region is set (step 207). Acalibration setting to confirm a detected light quantity of the waferand a trial of the calibration are performed (step 208). The setting ofinspecting conditions and a trial inspection for trial are performed(step 209). A final trial inspection to finally confirm the setinspecting conditions is executed (step 210). After the above items wereset, the wafer is unloaded (step 211) or the inspecting mode isexecuted. Although the above steps are fundamentally performed in order,they can be executed in arbitrary order.

[0108]FIG. 9 is a diagram showing a recipe input picture plane. When the“form recipe” button 108 shown in FIG. 6 is clicked by the mouse or thelike, this picture plane is displayed. In FIG. 9, the message region 105is arranged in the portion under the top portion and “guidance” or“message” to explain the operation or state is displayed. A message topromote the input of conditions is outputted to the message region 105.A cassette display region 111 to display the wafer loaded in theapparatus is displayed. A selection tab 112 to display and select thepresent set items, a kind file setting region 113, a step file settingregion 114, an electron beam irradiating condition setting region 115 toset electron beam irradiating conditions, and a “load wafer” button 116to instruct the loading of the wafer are arranged in the upper portionof the picture plane. As electron beam irradiating conditions, either alow acceleration voltage mode or a high acceleration voltage mode can beselected in the electron beam irradiating condition setting region 115.By clicking an “inspection region” tab 117, the screen can be shifted tothe inspection region setting picture plane for trial inspection.

[0109]FIG. 10 is a layout diagram showing an example of a picture planeof the inspection apparatus and shows a picture plane when theinspecting mode is executed. This picture plane is displayed by clickingthe “inspect” button 106 in a region 124 by the mouse or the like. Thepicture plane is mainly divided into five regions. As mentioned above,the apparatus ID, the name of recipe, the message, and the like aredisplayed in the region of the top portion of the picture plane. Aregion 118 on the left center side of the picture plane is constructedby: an inspection region designating region 119 to designate a shelfnumber list of a cassette and the inspection region of the wafer; and aninspecting condition input region 120 for inputting an inspection targetand inspecting conditions. The contents which are displayed are changedin accordance with the operation or progressing situation. Theinspecting conditions, data as an inspection result, image, and graphare displayed in an inspection display region 121 on the right centerside of the picture plane, and the contents which are displayed arechanged in accordance with the operation or progressing situation. Incase of the image, any of an optical microscope image, an SEM type lowmagnification image, and an SEM type high magnification image can bedesignated by clicking an “optical microscope” button 137, an “SEM lowmagnification” button 138, and an “SEM high magnification” button 139.

[0110] A region 122 is arranged on the right side of the picture planeand buttons for operation which are necessary in common for a pluralityof picture planes are displayed. As such buttons, for example, there area “start” button and an “end” button for inspection, a “print” button ofthe picture plane, an “execute” button to confirm the defect, an“unload” button of the wafer, a “store coordinates” button as an option,and the like. If the mode changes, the kinds of buttons which aredisplayed are also changed. When a desired button is clicked by themouse or the like on the picture plane, the operation corresponding tothe clicked button is executed. For example, when a “print” button 123is clicked, a hard copy of the displayed picture plane is executed.

[0111] The region 124 is arranged in the lower portion of the pictureplane and mode names indicative of the modes which are separately set inaccordance with the operation contents as described in FIG. 6 aredisplayed. When the operator clicks the “inspect” button 106, theinspecting mode to execute the automatic inspection is set. When the“confirm defect” button 107 is clicked, the mode to confirm the defectis set. When the “form recipe” button 108 is clicked, the recipe formingmode for inputting the parameters of the kind file and step filementioned above and executing the trial inspection is set. When the“utility” button 109 is clicked, the mode to execute the management ofthe parameters which are peculiar to the apparatus and the adjustment ofeach portion such as electronic optical system, mechanism system,detecting system, image processing system, or the like is set. Since thepicture plane shown in FIG. 10 corresponds to the inspecting mode, the“inspect” button 106 is displayed in a color different from that of theother buttons, thereby allowing the operator to easily recognize thatthe inspecting mode is at present set.

[0112] In the region layout, the time display region 101, apparatus IDdisplay region 102, inspection target wafer name display region 103, andoperator name display region 104 in the top portion and the region 124in the bottom portion are constructed by predetermined picture planestandards. According to the picture plane standards, it is standardizedthat the date is displayed at the left edge in the upper portion of thepicture plane, the operator name is displayed at the right edge, and themode name of the operation is displayed in the lower portion of thepicture plane. The picture plane layout of the present apparatus alsoconforms with the standards.

[0113] In the regions 118 and 121, the region which is always displayedat a predetermined position and the region whose display contents arechanged in accordance with the operation and progressing state areseparately arranged in the picture plane. Thus, even if the displaycontents change in accordance with the operation and progressing state,the same contents are always displayed at the same position, so that thevisibility of the picture plane is improved for the operator, theinputting operation and the progressing situation of the inspection canbe easily recognized, and efficiencies of the recipe forming operationand the inspecting operation can be improved.

[0114] The setting of the kind file and step file in the recipe formingmode will now be described. As mentioned above, the kind file comprisesthe chip matrix and the cell region file. The step file comprises theelectron beam irradiating conditions, calibrating conditions, alignmentconditions, inspecting region, sensitivity conditions, and OK/NGdiscrimination file. Particularly, the cell region file is positioned asa kind file, the inspection region file is positioned as a step file ata level lower than that of the cell region file, and the cell regionpicture plane and the inspection region picture plane are separatelydisplayed so that each parameter can be inputted. The cell region filecomprises the number of cell regions, coordinates of the cell region,and a cell pitch file. The inspection region file comprises aninspection chip, coordinates of the inspection region in the chip, and asampling file.

[0115] When a recipe comprising the kind and the lower step is formed,the contents which have been inputted so far are stored at an arbitraryposition of the recipe condition input by two stages of the kind andstep. When the recipe comprising the kind and the lower step is formed,whether the input of predetermined parameters has been completed or notis discriminated under the condition such that the completion of theinput of the parameters regarding the kind or step has been confirmed.When the input is not completed, an alarm is generated.

[0116]FIG. 11 is a flowchart showing a part of the step file formingflow. In the diagram, Case 1 relates to a case of forming the step filesubsequently to the formation of the kind file. Case 2 relates to a caseof correcting another step file and registering it as another file. Case3 relates to a case of newly forming a step file (the kind file alreadyexists). Case 4 relates to a case of changing the step file (only theparameter values are changed).

[0117] In case 2, the cassette is set (step 301), the kind file iscalled (step 302), and the original step file is called (step 303). Incase 3, the cassette is set (step 304), the kind file is called (step305), and a default step file is called (step 306). In both cases, thecassette shelf number is designated (step 307) and the wafer is loaded(step 308). The stage is moved so that the beam irradiates a stagereference mark position (step 309). An absolute calibration of the beamis performed (step 310). The alignment conditions are inputted includingthe case of Case 1 (step 311). The alignment is subsequently performed(step 312). A chip origin offset is set (step 313). The inspectionregion is set (step 314).

[0118] In Case 4, the kind file is called (step 315), the step file iscalled (step 316), the step file is displayed on the picture plane (step317), a desired parameter is changed (step 318), and its contents areregistered (step 319).

[0119] A flowchart showing the recipe forming procedure is shown in FIG.12. First, on the picture plane shown in FIG. 6, the operator clicks the“form recipe” button 108 by the mouse or the like (step 401), so thatthe screen is switched to the picture plane of the recipe forming mode.On the first picture plane of the recipe forming mode, either a sequencefor loading the inspection-subject wafer and forming a recipe or asequence for merely changing the numerical value of a specific parametercondition with respect to the recipe which has already been formed,namely, for setting the numerical values without loading the wafer isselected (step 402). In the embodiment, a method of loading the waferand forming a recipe will be described.

[0120] A wafer cassette on which the wafer is put is mounted on a loaderof the inspection apparatus (step 403). A condition to form a recipe,namely, either a mode to newly form a kind file and a step file or amode to change the file which has already been formed is designated(step 404). When “newly form” is selected, the kind file and step fileinputted as defaults are called on the picture plane. When the change ofthe kind file or step file which has already been registered isdesignated, the kind file and step file which have already beenregistered are called. After completion of the designation, the wafer isloaded by clicking the “load wafer” button on the picture plane.

[0121] If the “load wafer” button is clicked in a state where the presetparameters of the kind file or step file which have to be certainlyinputted are not inputted yet, a warning indicative of such a fact isdisplayed.

[0122] The wafer loading operation is started and, at the same time, theirradiating conditions of the electron beam are set (step 405). Eachtime the electron beam conditions are changed, a “beam calibration”(step 406) to adjust a focal point and an astigmatic point of theelectron beam is necessary. For this purpose, in the inspection methodand recipe forming method in the embodiment, the electron beamirradiating conditions are preliminarily designated (step 405) prior toperforming the “beam calibration” (step 406).

[0123] When the electron beam irradiating conditions are inputted andthe wafer loading operation is completed, a retarding voltage is appliedto a sample stage and a sample so as to obtain the conditions designatedby the electron beam irradiating conditions. In the “beam calibration”(step 406), the stage is automatically moved so that the position of apattern for electron beam calibration adhered on the sample stage comesjust under the electron beam irradiation optical system and the electronbeam is irradiated to the calibrating pattern. When a magnification, adistortion, and the like are corrected on the calibrating pattern andthe focal point and astigmatic point are adjusted by a knob, theprocessing routine advances to the next step.

[0124] Subsequently, the operator irradiates the electron beam to thedesignated position on the sample and adjusts the focal point andastigmatic point on the sample again after confirming an image contraston the sample (step 407). In this instance, if the electron beam iscontinuously irradiated to the sample, a contamination is adhered ontothe sample or the contrast of the sample fluctuates due to the charging.Therefore, the operations such that by irradiating the electron beamonce at a predetermined time interval, an image is obtained, and it isdisplayed on the screen are repeated. If a contrast between the patternportion and the background is not obtained on the displayed pictureplane, the change of the electron beam irradiating conditions isdesignated (step 408). Thus, the electron beam irradiating conditionsare changed (step 405). After the “beam calibration” (step 406) isexecuted again, the contrast can be similarly confirmed (step 407). Theelectron beam irradiating conditions and the focal point and astigmaticpoint conditions are stored as parameters in the step file.

[0125] When the electron beam conditions are determined and the contrastis confirmed and the conditions of the focal point and astigmatic pointare adjusted on the sample, the shot of the wafer and the size andlayout of the chips are inputted (step 409). When the shot size and theshot matrix are inputted and the layout of the chip in the shot isinputted, the presence or absence of the shot or chip in the portionaround the wafer is designated. The shot and chip layout which are sethere are stored as parameters in the kind file.

[0126] Alignment conditions are subsequently set (step 410).

[0127] After the alignment conditions are set and the alignment isexecuted, the cell region of the memory in the chip is set (step 411).The setting of the cell region is needed only with respect to the memoryproduct or the product having memory cells in the chip. An arbitrarychip is selected and the position of each memory cell mat in the chip issearched on the optical microscope image and designated. The sameposition is displayed again on the electron beam image, therebyregistering coordinates at a higher magnification and higher precision.When the designation of the position of the memory mat is completed, arepetition unit, namely, a pitch is inputted with respect to therepetitive pattern in the memory mat (step 411). As a repetitive pitch,a numerical value can be inputted or an image of the pattern is obtainedand displayed on the screen at a high magnification, a repetition unitis inputted by a cursor or the like, and it can be automaticallymeasured. The data and repetitive pitch of the memory cell region whichare inputted as mentioned above are registered as parameters in the kindfile.

[0128] The inspection region is subsequently designated (step 412). Inthe designation of the inspection region, two kinds, namely, theinspection chip and the inspection region in the chip can be designated.On the default conditions, all chips and all regions which were set asvalid regions on the wafer are inspected. However, if the user wants toreduce the inspection time, if there is no need to inspect all chips, orif the user wants to inspect only a specific region in the chip, theycan be arbitrarily designated every number of scanning lines of theelectron beam or every size of chip, or the chip can be designated.Further, an inspection sampling rate can be designated for thedesignated region. The details of the setting of the sampling rate willbe described hereinlater. The inspection region data inputted asmentioned above is stored as parameters in the step file.

[0129] When the designation of the inspection region (step 412) iscompleted, the processing routine advances to the calibration setting toadjust the brightness of the image upon inspection (step 413). In thecalibration, the image is obtained and a gain adjustment and abrightness correction are performed on the basis of a brightnessdistribution in accordance with a signal amount. An arbitrary chip isfirst selected from the picture plane and coordinates to obtain theimage to perform the calibration in the selected chip are designated andregistered. The automatic calibration is actually executed and a resultis confirmed. The contents inputted here, namely, the coordinates valuesto execute the calibration, the gain of brightness, and the offset valueare registered as parameters in the step file.

[0130] When the setting of the calibrating conditions and thecalibration (step 413) are completed, a trial inspection to actuallyobtain an image under the various conditions which have been set so faris executed and image processing conditions to detect a defect are set(step 414). When the image is obtained, the kind of filter to besubjected to a detection signal is selected. For example, a plurality offilters such as filter to suppress noises, filter to emphasize adifference of brightness, and the like have been registered and adesired filter is selected among them. An image of a small region in onechip is actually obtained under the same conditions as those in theinspection. In this case, a position to obtain the image can bearbitrarily designated. The small region denotes, for example, a regionof an image having a width of 100 μm as a scan width of the electronbeam and a length as long as one chip. When the image is obtained, athreshold value to discriminate the defect is inputted, the image at theposition where it was determined to be the defect in the obtained imageis displayed, whether the defect has actually been detected or not andwhether there is an erroneous detection or not are discriminated, andthereafter, the threshold value is adjusted to a proper value.

[0131] The operations such that the threshold value is inputted, theimage processes are executed, the defect detection and a situation ofthe erroneous detection are confirmed, and the threshold value isinputted again are repeated, thereby deciding the optimum inspectingconditions. Such a series of operations is called a small region trialinspection. There is also a case where the threshold value is determinedby a combination of threshold values of a plurality of items. Theparameters of the threshold value, filters, and the like which are sethere are stored as parameters in the step file.

[0132] Although various parameters necessary for inspection can be setby inputting the above various values, in the actual semiconductorwafer, a variation of processes in the wafer surface occurs and avariation of processes among the wafers or among the manufacturing lotsoccurs. Therefore, if the image processing conditions are merely set inthe small region trial inspection (step 414), it is insufficient and itis necessary to decide the threshold value in the defect discriminationby finally considering variation amounts.

[0133] For this purpose, after completion of the setting of thethreshold value, an arbitrary region on the whole surface of theinspection-subject wafer is further set and the inspection is executedunder the conditions set so far (step 415) and a defect detection leveland an erroneous detection level are confirmed. After that, if there arefinally proper conditions, the various parameters inputted so far areregistered into the kind file and step file. This processing step iscalled a final trial inspection.

[0134] When the inputting operations in the various steps so far arecompleted, a result is stored by designating the kind file name and stepfile name (step 416). The wafer is unloaded (step 417) and the series ofsetting operations of the recipe formation is finished (step 418).

[0135] The above processes relate to a flow in the recipe forming mode.In the above flow, as for the processes among the condition settingitems in a range from the selection of the electron beam irradiatingconditions (step 405) to the final trial inspection (step 415), byselecting a desired one of the tabs displaying the item names in thepicture plane, each process can be freely advanced or returned to anarbitrary processing item.

[0136] In the recipe formation, the number of items to obtain the imageor the like by using the actual semi-conductor product wafer itself anddecide the parameters from the image is large. However, as mentionedabove, there is a case where only the numerical value is changed independence on the item. For example, there is no need to designate theinspection-subject wafer in case of changing the inspection region orinspection chip. An example of the relation between the contents of thesetting and change of the conditions which are presumed in the recipeformation and the processing items which are necessary in the recipeforming mode in this instance will now be described hereinbelow. In caseof newly forming the condition files with respect to both the kind fileand the step file, the conditions are inputted with regard to all of theitems mentioned above.

[0137] In case of forming a recipe with respect to the wafer which isthe same kind as the wafer whose recipes have already been formed butwhose product steps are different, although the data of the existingkind file can be applied as it is with respect to the chip layout andthe memory cell region, the conditions which are optimum for thematerial and the surface shape of the inspection-subject wafer are setwith regard to the other electron beam irradiating conditions, alignmentconditions, calibrating conditions, inspection region, filters andthreshold value of the image processes, and the like.

[0138] In case of changing the alignment mark in the wafer of theproduct and steps whose recipes have already been formed, it issufficient to merely change a part of the file such as coordinates ofthe alignment mark, image to be stored, offset from the origin, and thelike.

[0139] Therefore, the existing file conditions can be used in common asthey are as for the electron beam irradiating conditions, chip layout,calibrating conditions, inspection region, and the like. Further, incase of merely changing the setting of the inspection region, there isno need to load the wafer but only the inspection region is changed andthe other inspecting conditions can be used in common. Therefore, thereis no need to pass through the unnecessary picture plane.

[0140] In the conventional inspection apparatus, when the recipe isformed, changed, or corrected, the wafer has to be certainly loaded intothe inspection apparatus. In the embodiment, in case of changing onlythe numerical values, in order to enable the numerical values to bechanged without loading the wafer, as shown in the flowchart of FIG. 12,the presence or absence of the loading of the wafer is selected at thefirst stage of the recipe formation (step 402) and “only change ofnumerical values” is designated (step 419). Thus, the kind file and stepfile which are necessary for inspection can be called and only thenumerical values can be changed with respect to the specific parameterswhich can be coped with by only the change of the numerical valueswithout loading the wafer. When there is a change of the conditions,they are changed (step 420) and the inspection region is designated(step 421). When there is a change of the numerical values of the imageprocesses, they are changed (step 422) and, thereafter, those values arestored (step 423). The processing routine is finished (step 424). Byseparating the recipe forming sequence for the items in which it isnecessary to load the wafer and for the items in which the loading ofthe wafer is unnecessary as mentioned above, the recipe can be formedand changed without loading the inspection-subject wafer with regard tothe items in which the wafer loading is unnecessary.

[0141] An example of a picture plane in the recipe forming mode of theinspection apparatus of the embodiment will now be described. FIG. 13 isa diagram of a picture plane in the recipe forming mode. In the exampleof the picture plane, as shown in the region of the selection tab 112 inFIG. 9, all of the series of parameter input contents mentioned above isalways displayed in one picture plane in order of the recipe formation.When an arbitrary tab is selected, the corresponding picture plane isdisplayed together with a color change. That is, the tabs are classifiedinto: a “chip matrix” tab for inputting the chip size and layout; an“alignment” tab for executing the setting of various conditions in thealignment and executing the alignment; a “calibration” tab fordesignating the pattern for brightness adjustment and executing thebrightness adjustment; a “cell information” tab for setting the memorycell region; an “inspection region” tab for setting the inspectionregion; a “trial inspection” tab for obtaining the image of the smallregion and deciding the defect detection threshold value; and a “finaltrial inspection” tab for confirming validity of the threshold valueincluding a variation in the wafer surface. The item names are displayedin a tab format by shifting the item names so that the whole item nameregion can be seen.

[0142] As for the picture plane regarding the tab which is beingexecuted or the tab which is being inputted, a display showing a statewhere the tab is being executed or it has been selected is performed.

[0143] In the example shown in FIG. 13, a “cell information” tab 126 isselected and the picture plane which is at present being inputted isdisplayed. The tab portion at this time is displayed by changing itsbackground color to a color different from that of the other item names.

[0144] Since the tab of the portion in which the input information waschanged is displayed in a further different color or different way ofindication, the history of the changed portion can be grasped.Therefore, the item which is at present being inputted and the changeditem can be displayed at an arbitrary timing, thereby enabling the wholeflow to be easily grasped.

[0145] The item names of the tabs are displayed in the upper portion ofthe region 118 in FIG. 10 and arranged separately from the input regionin the picture plane, the wafer map, and the work area where theobtained image or the like is displayed, so that the portion of the itemnames of the tabs can be easily seen and selected.

[0146] Although the case where the background color of the picture planein which the tab indicative of the inspecting operation is beingprogressed or inputted is made different from that of the other tabs hasbeen described, the invention is not limited to such an example. It issufficient that a discriminating sense different from that of the othertabs can be expressed. It is possible to use a method whereby aperiphery of the tab which is being progressed or inputted is thicklydisplayed or shadowed or the background is expressed by a hatchedregion, a dot pattern, or the like.

[0147] The items of “load wafer”, “electron beam irradiatingconditions”, and “contrast” among the item names in the tab displayregion in the diagram are displayed in a format different from the tabformats of the other items such as “chip matrix” and the like. That is,they are merely displayed as indicators showing that tab is at presentbeing progressed. This means that it is impossible to return to thoseitems during the recipe forming operation.

[0148] In FIG. 13, a forming tool and editing tool region 127, a “set”button 143, and a “cancel” button 144 are displayed in the lower rightportion on the picture plane. When the “set” button 143 is clicked, theinput parameters on the picture plane are temporarily registered and thescreen is automatically shifted to the next picture plane. Therefore, ifpredetermined parameters in each picture plane are inputted in orderevery picture plane to be shifted, a series of recipes can be formed.Since all of the tab portions are displayed, by designating an arbitrarytab, the screen can be freely returned to the picture plane which hasalready been inputted.

[0149] The information which the operator wants to confirm can bedisplayed any time by an instruction of an option region 130 displayedat the right edge of the picture plane in FIG. 13. In the example of thediagram, by clicking a “store coordinates” button 131, a box (not shown)to input the coordinates of the stored image is displayed and the storedimage can be displayed. The option region 130 is displayed in accordancewith the state of the displayed picture plane in a manner such that whenit can be used, it is displayed by black characters and when it cannotbe used, it is displayed in gray.

[0150] In the conventional inspection apparatus, the recipe formingsequence is fixed and when the input is once completed, the screencannot be returned to the picture plane which has already been inputted.Therefore, with respect to the already inputted portion, it isimpossible to change the inputting order, skip the input items, orconfirm again the numerical values of the input items or the like, it isnecessary to once finish the recipe formation and restart it. Since allof the items on the picture plane to which the screen is shifted by thesequence are not displayed, it is difficult to grasp the position orprogress of the present item in the whole flow.

[0151] In another example of the conventional apparatus, the input itemsare finely divided and there is a tree structure having a submenu withrespect to one item and a sub submenu with respect to the furtherdetailed item, and the whole picture plane is switched. If theprocessing routine once enters the submenu, therefore, unless the screenis returned one by one to the original picture plane, it is impossibleto shift to the next item. If the submenu is displayed, since the mainmenu is not displayed, it is difficult to recognize the progress andpositioning of the item which is at present being inputted.

[0152]FIG. 14 is a flowchart showing a recipe forming procedure in caseof the inspection apparatus of the embodiment and shows the details ofpicture plane layers in the embodiment. In the embodiment, as mentionedabove, the present input item and the whole flow are displayed in thetab format as shown in FIG. 9 so that they can be always discriminated.As shown in the flowchart of FIG. 14, the processes of the items (steps405 to 415) can be skipped or returned by inputting a tab as parallellayers with respect to the tab display portion (step 425). Therefore,for example, with respect to one item such as cell region setting (step411) which needs to be inputted, the picture plane construction suchthat the input is completed in one picture plane, namely, it can beinputted without switching to the conventional submenu picture plane isused.

[0153] In the inspection, it is necessary to set the cell region as aninspection target region. The third embodiment of the invention will nowbe described hereinbelow.

[0154]FIG. 13 mentioned above shows a map picture plane in a map whichis used to set the cell information. Any of an optical microscope image,an SEM type low magnification image, and an SEM type high magnificationimage can be designated by clicking any of the “optical microscope”button 137, “SEM low magnification” button 138, and “SEM highmagnification” button 139. On the picture plane of the cell information,the cell region arranged in a map-in-chip 140 displayed on the left sidein FIG. 13 is set while designating it on the image. Further, a cellpitch in the cell region is inputted.

[0155] An “adjust image” button 132, a “store image” button 133, and an“irradiating conditions” button 134 in the option region 130 in FIG. 13are displayed when the actual picture plane is displayed in an imagedisplay portion 156.

[0156]FIG. 15 is a diagram showing a part of the picture plane in therecipe forming mode. When the “irradiating conditions” button 134 in theoption region 130 in FIG. 13 is clicked, an irradiating conditiondisplay region 92 shown in FIG. 15 is displayed. An acceleration voltageand a beam current can be designated in an electron beam irradiatingcondition input region 93. The number of signal adding times and a pixelsize can be designated in a signal obtaining input region 94. The numberof signal adding times denotes the number of times in case of scanningthe wafer by the electron beam. The pixel size denotes a size of pixelof an image which is formed from the signal obtained by the secondaryelectron detector 35 shown in FIG. 2, namely, a length of one side. Apixel smaller than a beam diameter of the electron beam can be selected.Therefore, even if a width of circuit pattern differs on one chip, thesize of pixel can be designated in accordance with the width of thecircuit pattern, so that a high efficiency of the inspection time can berealized.

[0157] To display the setting picture plane of the cell region shown inFIG. 13, a chip to set the cell region is selected by clicking the mouseor the like from the picture plane displayed on the wafer map displayedon the inspection region designating region 119 shown in FIG. 10.Subsequently, by clicking a “chip” button 141, the screen is switched tothe picture plane of the map in the selected chip shown in FIG. 13. Or,the screen can be also switched to the picture plane of the map in thechip by double-clicking the chip as a setting target.

[0158] The set cell region is displayed in the map-in-chip 140 shown inFIG. 13. To move the wafer, for example, it can be moved by using akeyboard or a joystick or by clicking a “move” button 142 in the formingtool and editing tool region 127. A desired chip on the map-in-chip 140can be moved to the relevant position by clicking the mouse.

[0159] The cell region can be set by clicking a desired button in theforming tool and editing tool region 127. If the user wants to see theimage by the optical microscope concerning the cell region set on themap-in-chip 140, the “optical microscope” button 137 and “set” button143 are clicked. Thus, the image by the optical microscope is displayedin the image display portion 156. Similarly, an SEM image of a lowmagnification is displayed by clicking the “SEM low magnification”button 138 and an SEM image of a high magnification is displayed byclicking the “SEM high magnification” button 139.

[0160] In case of deleting all of the contents set on the cellinformation picture plane shown in FIG. 13, the “cancel” button 144 isclicked, so that the screen is returned to an initial state of the cellinformation picture plane.

[0161]FIG. 16 is a flowchart showing a method of designating the cellregion by using a desired button in the forming tool and editing toolregion 127 in FIG. 13. In FIG. 16, points to set the region are inputted(step 515) by clicking any of a “rectangle” button 146 (step 512), a“rectangular area” button 148 (step 513), and a “rectangular line”button 147 (step 514) shown in FIG. 13 as tool buttons which are used inthe “optical microscope” image (step 511). Subsequently, a region (orfigure) of the inputted points is decided (step 516) by clicking a“decide region” button 149.

[0162] By clicking a “trace” button 150 and clicking the “SEM highmagnification” button 139, the image which is specified by the points ofthe decided region is inputted again (step 517). The image is traced(step 518) by clicking the “trace” button 150. Thus, each point isinputted (step 519). The region (or figure) of the inputted points isdetermined (step 520) by clicking the “decide region” button 149.

[0163] Whether the next cell region is formed or not is subsequentlydiscriminated (step 521). If it is formed (YES), the processing routineis executed again from the step of inputting each point. When theprocessing routine advances to a step next to the step of forming theregion (NO), an “input cell pitch” button 151 is clicked and a cellpitch is inputted (step 522).

[0164]FIG. 17 is a flowchart showing a method of adding the kind fileand step file in the case where there are a new kind and a new step.

[0165] The circuit pattern inspection apparatus in the embodiment hasmeans for grouping the files comprising the chip matrix, cell region,electron beam irradiating conditions, calibrating conditions, alignmentconditions, inspection region, sensitivity conditions, and OK/NGdiscriminating file. The circuit pattern inspection apparatus isdetermined so as to construct the kind file by the chip matrix and thecell region file and construct the step files by the remaining files.Parameters about each file are set as a structure having the step filesat a level lower than that of the kind file. The cell region filecomprises the number of cell regions, cell region coordinates, and cellpitch file.

[0166] In FIG. 17, whether a new inspecting request relates to a newkind or not is discriminated (step 601). If it is the new kind (YES),the kind parameter is displayed (step 602) and a file of the new step isformed (step 603). If it is not the new kind (NO), whether the step is anew step or not is discriminated (step 604). If it is the new step(YES), the set parameters are displayed (step 605) and the parametersare changed, namely, corrected (step 606), thereby forming a new stepfile (step 607). If it is not the new step (NO), the set parameters aredisplayed (step 608).

[0167] The actual inspection region is set (step 609) on the basis ofthe parameters set as mentioned above.

[0168] The new step file can be formed by displaying the set parametersand correcting them, namely, by a mere correction without newly forminga step.

[0169]FIG. 18 is a flowchart showing a procedure for displaying andsetting the inspection region.

[0170] In FIG. 18, whether the new inspecting request relates to a newkind or not is discriminated (step 611). If it is the new kind (YES), adefault region is displayed (step 612). If it is not the new kind (NO),whether the step is a new step or not is discriminated (step 613). If itis the new step (YES), the same inspection region as that in theexisting step is displayed (step 614). If it is not the new step (NO),the set inspection region is displayed (step 615). The displayed regionis corrected (step 616) and the actual inspection region is set (step617).

[0171] In the region correction in step 616, for a preset inspectionregion, a new inspection region can be set by changing it.

[0172] A method of using the forming tool shown in FIG. 13 will now bedescribed.

[0173] The forming tool shown in the forming tool and editing toolregion 127 in FIG. 13 mentioned above intends to form information of thecell region by tracing the cell region from the “optical microscope”image, namely, the image of the optical microscope by using the mouse orthe like. In the forming tool, the actual coordinates are calculated onthe basis of the coordinates designated on the image and the presentposition of the wafer. The “rectangle” button 146, “rectangular line”button 147, and “rectangular area” button 148 are used to set the cellregion by inputting the points from a superimposed picture plane. Amethod of setting the cell region by those button operations will now bedescribed hereinbelow.

[0174] FIGS. 19 to 21 are conceptual diagrams showing the method ofsetting the cell region.

[0175] (a) Rectangle

[0176] In case of a rectangle, two diagonal points of a rectangleshowing the cell region are inputted as shown in FIG. 19. The cellregion can be decided by inputting an upper left point P1 and a lowerright point P2.

[0177] (b) Rectangular Line

[0178] As for a rectangular line, as shown in FIG. 20, after twodiagonal points of the rectangle showing the cell region are inputted,the other two points are inputted and a plurality of cell regions of thesame size as that of the rectangle can be set. A rectangular line regioncan be decided by inputting the upper left point P1 of the first region,inputting the lower right point P2 of the first region, inputting anupper left point P3 of the next region, and inputting an upper leftpoint P4 of the last region.

[0179] (c) Rectangular Area

[0180] As for a rectangular area, as shown in FIG. 21, after twodiagonal points of the rectangle showing the cell region are inputted,by inputting the other four points and setting rows and columns, aplurality of cell regions of the same size as that of the rectangle canbe set. A rectangular area region can be decided by inputting the upperleft point P1 of the first region, inputting the lower right point P2 ofthe first region, inputting an upper left point P3 of the region of thenext row, inputting an upper left point P4 of the region of the lastrow, inputting an upper left point P5 of the region of the next column,and inputting an upper left point P6 of the region of the last column.

[0181] (d) Decide Region

[0182] The formed figure is decided by clicking the “decide region”button 149 shown in FIG. 13 mentioned above. Before decision, theinputted coordinates can be returned to the original coordinates eachtime a “cancel operation” button 152 is clicked once.

[0183] (e) Trace

[0184] “Trace” is a function to form data of high precision by inputtingagain the cell region data inputted on the “optical microscope” image byclicking the “SEM high magnification” button 139. When the “trace”button 150 shown in FIG. 13 is clicked, the image is automaticallyswitched to the SEM image and a target point is moved to the first inputcoordinate point of the data which was inputted by the “opticalmicroscope” image and whose region was decided before. The coordinatesare inputted again in accordance with a guidance. When the re-input ofall coordinate points is completed, the “decide region” button 149 isclicked. So long as a timing before the “decide region” button 149 ispressed, by clicking the “cancel operation” button 152, the coordinatescan be returned backward to the trace coordinates by the number of timesas many as the number of clicking times.

[0185] (f) Cancel Operation

[0186] At a timing before the figure is decided by the “decide region”button 149, the inputted coordinates can be returned to the tracecoordinates by the number of times as many as the number of clickingtimes by clicking the “cancel operation” button 152.

[0187] (g) Delete

[0188] The mode is switched to the object selection in the display stateof the map-in-chip. By selecting a figure in the map by the mouse (thecolor of the frame of the figure changes to red) and clicking a “delete”button 153, the figure can be deleted.

[0189] (h) Option

[0190] An “option” button 145 is a future button for expansion.

[0191] (i) Input Cell Pitch

[0192] Prior to inputting the cell pitch, a chip of the wafer is movedto the position to input the cell pitch on the “optical microscope”image. Subsequently, the “input cell pitch” button 151 is clicked. Solong as the “optical microscope” image, it is automatically switched tothe “SEM high magnification” image. The position of the cell is inputtedfrom the image.

[0193] (j) Confirm Position

[0194] By clicking a “confirm position” button 154, corner portions ofthe designated cell region are displayed on the image of the imagedisplay portion 156 by marks such as circles or the like, so that thedesignated range of the cell region can be confirmed on the actualpicture plane. If it is deviated on the actual picture plane, thedeviation can be corrected by clicking the “move” button 142 anddesignating a target region.

[0195] (k) Set

[0196] In case of deciding the contents set on the cell informationpicture plane, the screen is switched to the inspection region byclicking the “set” button 143.

[0197] (Q) Cancel

[0198] In case of cancelling all of the contents set on the cellinformation picture plane, the “cancel” button 144 is clicked. Thescreen is returned to the initial state of the cell information pictureplane.

[0199] (m) Other Setting Means of Cell Region

[0200] A function which can perform the setting by the copy ortrace-back can be provided in addition to the movement and deletiondescribed above. It is also possible to provide a function which canperform the setting of the grouping of the cell regions or the movement,deletion, or copy of the grouped cell regions. As a function of theforming tool, it is possible to provide a function to symmetrically setthe rows, column, or cell regions as combinations of them by a mirrorreverse. The specific setting means of the cell region are summarized asfollows.

[0201] (A) Setting of rectangle, rectangular line, rectangular area, andmirror reverse

[0202] (B) Setting by copy, deletion, movement, and the trace-back usingthe tracing function

[0203] (C) Setting of copy, deletion, and movement by the groupingfunction of the cell regions

[0204] It is possible to arbitrarily select one or two or more set itemswhich are displayed in (A), (B), and (C) and form the cell regions withrespect to them. Any of (A), (B), and (C) can be selected. Further,although the inside of the rectangular area or the like is theinspection region in the above example, contrarily, the outside of therectangular area or the like can be used as an inspection region. Such amethod can be realized by displaying a check box (not shown) for askingwhether the inspection region is the inside or outside when the “decideregion” button 149 is clicked.

[0205] The contents of the cell regions can be independently set andstored every plural cell regions. Therefore, by calling the stored setcontents of the cell regions when the cell region is set, the inspectionby the same cell region set contents as those used before can be easilyperformed. Since there is no need to newly form the cell region setcontents every time, the inspection time can be reduced.

[0206] Such a setting of the cell region can be performed by not onlythe “SEM” image but also the “optical microscope” image. The inventioncan be also obviously applied to not only the circuit pattern inspectionapparatus according to the embodiments but also a wafer inspectionapparatus using a laser beam.

[0207] Procedures for the trial inspection and the final trialinspection will now be described hereinbelow as a fourth embodiment ofthe invention.

[0208] After the input of the recipe conditions described in FIGS. 8 and9, when the “load wafer” button 116 in FIG. 9 is selected, if the kindand step information has already been set, the kind and step informationis read as conditions of default. In case of new information, initialvalues set in the system are read as conditions of default. The wafer isloaded in accordance with the kind and step information. Aftercompletion of the loading, various settings for the trial inspection andvarious settings for the final trial inspection to finally confirm theset inspecting conditions are performed.

[0209]FIG. 22 is a diagram of the trial inspection picture plane. Byclicking the “inspection region” tab 117 in the selection tab 112 shownin FIG. 9 which was validated after completion of the wafer loading, thecenter portion on the left side of the picture plane shown in FIG. 22 ischanged to the picture plane for wafer map display. When the position ofthe stage is changed by clicking a point on the wafer map, the stage ismoved and the chip image of the optical microscope is moved. By clickinga “obtain image” button 157, the image of the trial inspection of thechip at the position after the change is obtained. In the trialinspection, the image of only one stripe of the electron beam width isobtained instead of the whole region of the chip.

[0210] Although a stripe-shaped map is displayed in the left half of thepicture plane, it is illustrated on the drawing for the purpose ofsimplicity of explanation in a manner such that in the region of onechip, one stripe region which is elongated in the Y direction from whichthe image was obtained is shown in white and the other stripe regionsare shown as hatched portions. Extracted defects 164 are displayed inthe picture plane.

[0211] In the picture plane, there are displayed: a total detecteddefect number display region 167 for displaying the total number ofdetected defects; an actual defect number display region 168 fordisplaying the number of actual defects; and information such as defectID, classification code, defect area, defect size, and the like of eachdefect. A defect information display region 169 in which theclassification code can be inputted and a “graph” button 170 to call agraph display option are also arranged in this picture plane.

[0212] The positions of the extracted defects are displayed by, forexample, small circle points as shown in the defect 164 in FIG. 22. Byclicking this point, the image of the defect is displayed in the imagedisplay portion 156 on the right side of the picture plane and variousinformation of the defect is displayed in the defect information displayregion 169. By inputting the classification code in the defectinformation display region 169, as shown in the diagram, a plurality ofdefects 164 on the stripe map are classified into true defects 165 afterthe classification as shown by X points or out-of-target defects 166after the classification as shown by square points. The number of actualdefects in the actual defect number display region 168 is changed to thetotal number of true defects 165 after the classification. The totalnumber of detected defects in the total detected defect number displayregion 167 is changed to the value obtained by subtracting the number ofout-of-target defects 166 after the classification from the number ofdetected defects.

[0213] The true defects 165 after the classification which were once setand the out-of-target defects 166 after the classification are stored.At the time of the subsequent inspection, the classification code of thetrue defects 165 after the classification of the present time ispreliminarily allocated to the defects existing in a range of apredetermined distance from the present true defects 165 after thepresent classification.

[0214] The click of the defects 164 on the stripe map and the input ofthe classification code as mentioned above are repeated. A distributionof the defects on the stripe map, the number of classified defectsdisplayed in the total detected defect number display region 167, andthe number of true defects displayed in the actual defect number displayregion 168 are referred to. As mentioned above, the operator candiscriminate whether the defect to be inherently detected has beendetected or the surplus defects are not detected.

[0215] When it is determined that the inspecting conditions are improperas a result of the discrimination, the inspecting conditions are setagain in a “sensitivity conditions” setting region 161. The inspectionis executed again by clicking a “virtual inspection” button 158. Byrepeating those operations, the inspecting conditions suitable forinspection are searched. When the confirmation of the conditions at oneposition is finished, the picture plane is displayed in a map showingthe whole wafer as necessary. The image display region is switched tothe “optical microscope” image display in the optical microscope, acondition setting position is selected again, and the operations in arange from the image obtaining step to the condition setting step arerepeated.

[0216] When those conditions are determined to a certain extent, animage shown in FIG. 23 is displayed by clicking the “graph” button 170shown in FIG. 22. FIG. 23 is a diagram of a graph display image ofdefects. A 3D graph 171 is displayed on the right side of the pictureplane. In the 3D graph, an X axis indicates a lateral deviation, a Yaxis shows brightness, and a Z axis represents a difference between thenumber of true defects after the classification or the total number ofdefects and the number of out-of-target defects after theclassification. Values of the lateral deviation and the brightness areset in the “sensitivity conditions” setting region 161 in FIG. 22. Aninspecting condition setting range for drawing a graph and a graph rangesetting step are displayed in a “virtual inspection” region 172 in FIG.23. A “calculate” button 173 to instruct the drawing of the graph and a“return” button 174 to return from the graph option are arranged.

[0217] First, in FIG. 22, when sensitivity conditions are set in the“sensitivity conditions” setting region 161, the set values aredisplayed as initial values in the “virtual inspection” region 172 inFIG. 23. An initial value “1” is displayed as the number of steps. Theoperator rewrites the set values in the “virtual inspection” region 172and clicks the “calculate” button 173. By this click, the imageprocessing conditions are sequentially changed in the set range in theset step and the following processes are executed. That is, the storeddigital images are processed under the set conditions and the defectsare extracted and stored into a defect buffer. Subsequently, thecontents in the defect buffer are read out. When a distance (comparisondifference) between each defect and the defect which has already beenclassified is equal to or less than a predetermined value, theclassification which has already been allocated to the classified defectis allocated to each defect. After the classification is allocated, adifference between the number of true defects or the total number ofdefects and the number of out-of-target defects after the classificationis obtained and set to defect number data of the present inspectingcondition. After completion of the processes, the 3D graph 171 isdisplayed.

[0218] Although the display picture plane of the 3D graph of the numberof defects is shown in FIG. 23, a range where the number of true defectsis the maximum value and the difference between the total number ofdefects and the number of out-of-target defects after the classificationis equal to the number of true defects and a center of the range can beobtained and displayed together as an inspection possible inspectingcondition and a differential inspecting condition. By this display, theinspecting conditions can be more visually instructed.

[0219] A picture plane shown in FIG. 25 is displayed by clicking a“final trial inspection” tab 163 which was validated after completion ofthe wafer loading in FIG. 9. FIG. 25 is a diagram of final trialinspection picture plane.

[0220] This diagram relates to the set picture planes of the chip fortrial inspection and are used to confirm recipe data by performing thesame processes as those of the actual inspection on the basis of theformed recipe. In FIG. 25, there are arranged: a wafer map 155; a“sampling rate” setting region 175 to set a sampling rate; a “set”button 176 to validate the inspection target chip and the sampling rate;a “cancel” button 177 to cancel the setting; a “the number of inspectionchips” display region 178; a “total number of chips” display region 179;an “inspection area” display region 180; and an “inspection predictivetime” display region 181.

[0221] The final trial inspection is started by clicking a “start”button 182 of the inspection region at the right edge of the pictureplane. When the inspection and the defect confirmation are completed,the screen is returned to this picture plane.

[0222] First, a display picture plane is formed and the image isobtained and displayed by the set recipe. The optical microscope imageis switched to the SEM image and the image display is started.

[0223] In the wafer map operation, the inspection target region isturned on/off by clicking the left button of the mouse or forming arectangular area by drag on the wafer map 155 in FIG. 25. At the sametime, the number of inspection chips and an inspection area arecalculated and displayed. Further, an inspection predictive time isroughly calculated and displayed.

[0224] The sampling rate is a rate at which the inspection region isthinned out. When the sampling rate is inputted in the “sampling rate”setting region 175, the inspection area and an inspection predictivetime are calculated and displayed again. As default values of thesampling rate, 100%, 50%, 25%, 12.5%, 6.25%, and 3.175% are prepared.

[0225]FIGS. 24A to 24C are inspection region diagrams each showing thenumber of beam scanning lines. The sampling rate and the ratio of thenumber of beam scanning lines in the inspecting range are madecorrespond to each other. FIG. 24A shows a case where 100% is designatedand the whole inspection region is scanned by the beam. FIG. 24B shows acase where 50% is designated and the beam scanning stripes in theinspection region are scanned every other stripe. FIG. 24C shows a casewhere 25% is designated and the beam scanning stripes in the inspectionregion are scanned every fourth stripe. As mentioned above, when it isdetermined that even in the inspection region, if there is no need tojudge the presence or absence of the defect and obtain the image andscan the beam, the inspection time can be reduced by thinning out theinspection region.

[0226] By clicking a “set” button 159 in FIG. 22, a calibration isexecuted and the screen is switched to the trial inspection pictureplane of FIG. 25. By clicking the “set” button 159, the set data isstored. By clicking a “cancel” button 160, the set data is abandoned andset to the initial state.

[0227] The trial inspection picture plane and the final trial inspectionpicture plane are also the picture plane shown in FIG. 25 and can bedistinguished by displaying either a “trial inspection” tab 162 or the“final trial inspection” tab 163 in a different color. The sameprocesses as those in the actual inspection are performed on the basisof the recipe formed by the foregoing method and whether the recipe datais good or not is confirmed.

[0228] In the initial state, the set inspection target chip and the setsampling rate are displayed in the wafer map 155 and “sampling rate”setting region 175, respectively. Values which are determined by theinspection target chip and the sampling rate are displayed in the “thenumber of inspection chips” display region 178, “total number of chips”display region 179; an “inspection area” display region 180; and“inspection predictive time” display region 181. The operator inverts“valid/invalid” of the inspection target chip by dragging the region onthe wafer map 155 by the mouse or the like and changes the sampling rateby selecting again the sampling rate display in the “sampling rate”setting region 175 from the candidates. By clicking the “set” button 176after the change, the change is validated. By clicking the “cancel”button 177, the change is cancelled and the picture plane is returned tothe initial state. By clicking the “inspect” button 106 after thesetting or cancellation, the stripe inspection in the inspecting mode isstarted. By clicking the “confirm defect” button 107, the defectconfirmation is started. The operator confirms the validity of theinspecting conditions on a picture plane for defect confirmation, whichwill be explained hereinlater. After the confirmation, the screen isreturned to the final trial inspection picture plane of FIG. 25.

[0229] The whole wafer and the present position of the stage aredisplayed in the wafer map 155. The image of the optical microscope isdisplayed in the image display portion 156. The position of the stage ischanged by clicking by the mouse or the like in order to select theposition to set the conditions on the wafer map 155. The image of theone-stripe inspection is obtained by clicking the “obtain image” button157.

[0230] Subsequently, by setting the conditions in the “sensitivityconditions” setting region 161, an “image display” button 183 toinstruct the display of the obtained image and a “differential imagedisplay” button 184 to instruct the display of a differential image of aresult on the halfway of the image processes are displayed on thepicture plane. An image as a result on the halfway of the imageprocesses such as a differential image can be displayed in the imagedisplay portion 156 on the right side of the diagram.

[0231] For example, by clicking an arbitrary chip on the wafer map 155,displaying the instruction point 185 at that time by a circle, andclicking the “image display” button 183, the obtained image at theinstruction point 185 is displayed in the image display portion 156. Byclicking the “differential image display” button 184, the result on thehalfway of the image processes is displayed in the image display portion156. When the conditions in the “sensitivity conditions” setting region161 to set the image processing conditions are changed while the resulton the halfway of the image processes is displayed in the image displayportion 156, the image is processed again and the result on the halfwayis displayed again. Thus, since the sensitivity conditions of the imageprocesses are changed and the image is displayed, the defect to beinherently detected can be detected and, moreover, the operator candiscriminate whether the surplus defects are not detected or not.Although the case of displaying the result on the halfway of the imageprocesses has been described, image processes equivalent to them can beperformed or image processes which are advantageous for decision of theimage processing conditions can be performed and processing results canbe displayed. The inspecting conditions can be determined on the basisof the image in the region other than the defective portion in thismanner and the conditions can be set at a location without a defect.

[0232]FIG. 26 is a diagram of a picture plane at the time of the defectconfirmation in the final trial inspection. On the picture plane, adefect map 187 which enables the position of a defect 186 to be easilyconfirmed by enlargedly displaying the wafer is displayed on the leftside, and the image display portion 156 to display an image of thedefect 186 is displayed on the right side. On the picture plane, thereare also arranged: a defective filer instructing region 188 forinstructing the operation of a defective filter to select the defect 186displayed on the defect map 187 or exchange the displaying order on thebasis of a feature of the defect or a feature of the positiondistribution; the “adjust image” button 132 for changing an adjustingstate of the image displayed in the image display portion 156; the“store image” button 133 for storing the image displayed in the imagedisplay portion 156 into a storing device; and a “store” button 192 forstoring the result of the trial inspection during the recipe formation.

[0233] On the defect map 187, a fact that the defective data could notbe hardware processed or software processed can be known by an overflowdisplay 191 in different color or the like.

[0234] In the defective filer instructing region 188, a defectinformation display region 195 shown in FIG. 32, which will be explainedhereinlater, and the display can be exchanged by clicking an “exchange”button 193.

[0235] In the defective filer instructing region 188, the defects 186displayed on the defect map 187 can be reduced to the necessary defectsby instructing filtering conditions of the defects. In the defectinformation display region 195 shown in FIG. 32, which will be explainedhereinlater, the order of the defects which are displayed can beexchanged and the defects can be sorted in order of high significance.The image corresponding to the designated position of the defect isdisplayed in the image display portion 156. By clicking the “adjustimage” button 132 in the option region 130 as necessary, image processessuch as contrast adjustment of the image, signal amount adjustment,flattening of a histogram, focal position adjustment, astigmatic pointadjustment, differentiation, and the like or a change of the detectingconditions can be performed. By such an improvement of a picturequality, an image which is displayed can be changed to an image fromwhich necessary information can be easily obtained. Besides the picturequality improvement, it is possible to perform a display of an imagehistogram, a display of a waveform of the designated portion, a displayof an image gradation value, an overlap display of a result of thedefect extracting process for the display image, an instruction of thedefect position, and a display of image information such as adifferential image of a result on the halfway of the defect extractingprocess or the like.

[0236] By clicking the “irradiating conditions” button 134 in the optionregion 130, the irradiating conditions of the electron beam of the SEMimage described in FIG. 15 and the signal obtaining method can be setand the detailed observation of the defect can be executed.

[0237] Generally, although the inspection result is not stored duringthe recipe formation, the inspection result can be stored by clickingthe “store” button 192 of the inspection result by the mouse or thelike. The stored inspection result can be outputted via a storing deviceor network to an analyzing apparatus for analyzing compositions of thedefect, a reviewing apparatus for observing the defect, or the like. Byclicking the “store image” button 133, the image displayed in the imagedisplay portion 156 is stored into the storing device together with theinspection result information.

[0238] Information which is displayed on the defect map 187 is thedefects 186, information of the chip, inspection region, memory cellregion, scale showing the size of map at the present stage position, andoverflow display 191. The overflow display 191 is displayed in the casewhere a large quantity of defects or large defects are generated due toa reason such that a flaw or a large foreign matter is deposited on thewafer or the like, so that the hardware processes or software processescannot be performed. By this display, the operator can know that thedefects of the number that is equal to or larger than the number ofdefects which can be displayed or the defects of a special size exist.He can make a necessary judgment for those defects without beingconfused by an apparent defect distribution.

[0239] The above functions can be applied to not only the defectconfirmation in the final trial inspection as one of the steps of therecipe formation or the defect confirmation after the inspection in theinspecting sequence but also all of the inspecting procedures.

[0240] The results of the final trial inspection can be stored. Thisstorage can be instructed by clicking the “store” button 192.

[0241] The fifth embodiment according to the invention will now bedescribed hereinbelow.

[0242] When the recipe is decided as a result of the foregoing finaltrial inspection, the actual inspection is executed.

[0243]FIG. 27 is a flowchart showing the inspecting procedure. FIG. 28is a diagram of a picture plane in the inspecting mode.

[0244] The inspecting mode is designated by clicking the “inspect”button 106 in FIG. 6 and the inspection is started. When the inspectionis started, the screen is changed to a picture plane to input inspectingconditions as shown in FIG. 28. In FIG. 28, a message to promote theoperator to input the inspecting conditions is outputted in the messageregion 105 and the cassette display region 111 to display the substratemounted in the apparatus is displayed. The operator selects one of thecassettes as inspection targets and inputs the inspecting conditions ofthe substrate corresponding to the selected cassette in an inspectingcondition setting region 135. By selecting a “start” button 136 of theinspection after completion of the above operations, the information ofthe kind file and step file designated by the inspecting conditions isread out, the inspecting conditions are set on the basis of theinformation, and the wafer is loaded onto the stage.

[0245] After completion of the loading, an alignment to measure theposition of the pattern and a calibration to measure a detected lightquantity are performed on the basis of the pattern information on thesubstrate.

[0246] In FIG. 28, a whole flow of the inspecting sequence, namely,processing items are displayed in processing order in the lower regionof the message region 105 in the picture plane. The processing items areclassified into nine items such as condition input, wafer loading, beamcalibration, alignment, calibration, inspection, result display, defectconfirmation, and unloading and they are arranged in order. When theinspecting process progresses, a background of the portion correspondingto the present processing item is displayed in a color different fromthe background color of the other items. Further, with respect to thefurther detailed processes in the item name of the item which is beingprocessed, the detailed contents under processing are successivelydisplayed in the message region 105. By those displays, the operator canvisually monitor and grasp the progress of the present process at aglance. A fact that there is no generation of an error, namely, theprocess is progressing without a problem can be confirmed during theprocess. In the conventional apparatus, since main items are merelydisplayed by guidance, it is difficult to grasp the whole inspectingflow and grasp to which step the processing routine advances. Since thecontents of the guidance are rough, it is difficult to detect a problemeven if it occurred in the halfway. Inconveniences on the operations canbe solved by the operation picture plane of the invention.

[0247] A shelf number list to display the information of the cassette inwhich the inspection-subject wafer is mounted is displayed in thecassette display region 111 on the left side of the picture plane ofFIG. 28 and the relevant shelf number is selected from the shelf numberlist. Although not shown, the selected shelf number is displayed in amanner different from that of the others in order to show that theconditions are being inputted.

[0248] For example, characters of “under condition input” are displayedor the selected shelf number can be displayed in a color different fromthe background color of the other shelf numbers.

[0249] Moreover, the inspecting condition setting region 135 to inputthe kind and steps of the wafer, operator's name, and the like selectedfrom the shelf number list is displayed on the right side of the pictureplane and the inspecting conditions can be inputted.

[0250] If there is the inspecting condition information which hasalready been inputted with respect to the selected shelf number, byselecting this shelf number, the contents of this shelf areautomatically displayed.

[0251] In this manner, the location of the inspection-subject wafer isclarified, the conditions for inspection can be easily inputted, and thepreparation until the start of the inspection can be performed in ashort time.

[0252]FIG. 29 is a diagram of the picture plane in the inspecting mode.In the diagram, set information before the inspection, a start time fromthe wafer loading, and an end time on the calculation are displayed inan inspection progressing situation display region 908. The number anddensity of defects extracted as a result of the inspection are displayedin an inspection progress display region 909. When the inspection isfinished, an inspection time and an end time are displayed in the region909. A recipe display region 910 to display the contents of the recipeinputted at the time of the recipe formation is arranged under theregion 909.

[0253] The number of cassettes to be inspected and the name of thecassette which is at present being inspected are displayed in themessage region 105. A degree showing a current progressing situation ofthe inspection is displayed by a percentage (%) and an icon.

[0254] Since the inspection progressing situation displayed in themessage region 105 and the inspection information in the inspectionprogress display region 909 are displayed on the same picture plane asmentioned above, whether the inspection should be finished on thehalfway without inspecting all of the inserted cassettes can bediscriminated in accordance with a situation of the inspection result.In the case where it is unnecessary to wait until the end of theinspection, the inspection time can be saved.

[0255] In the flowchart shown in FIG. 27, when the input of theinspecting conditions, information of the wafer, and the like (step 703)is completed, the wafer passes through a spare chamber for conveyanceand is loaded into an inspection chamber which was vacuum evacuated(step 705). Upon completion of the loading, a retarding voltage isapplied to the sample stage and the sample. The applying voltage is setin accordance with the parameters determined when the irradiating energyto the wafer is set in the formation of the recipe.

[0256] The stage is automatically moved so that the position of anelectron beam calibrating pattern adhered on the sample stage reachesjust below the electron beam irradiation optical system (step 706). Theelectron beam is irradiated to the pattern for calibration.

[0257] If the electron beam is continuously irradiated to the wafer orthe calibrating pattern, a charging state of the wafer surface changes,so that when a signal is detected as an image, the contrast isfluctuated due to an influence of the charging and a contamination isdeposited. To suppress it, for a period of time other than the case ofobtaining or inspecting the SEM image, the electron beam is irradiatedonto a blanking plate arranged on the way of the electronic opticalsystem by a blanking electrode and is not irradiated to the wafer. Theimage of the calibrating pattern is obtained, a magnification, adistortion, and the like of the image are calculated, and correctingconditions of the electron beam are obtained.

[0258] The stage is subsequently moved to another pattern forcalibration and a focal point and an astigmatic point are adjusted by anencoder or the like on an operation panel while looking at the image ofthe calibrating pattern (step 707). When the adjustment is finished, theprocessing routine advances to the next step. An alignment is nowperformed to correct the direction of the pattern on the wafer set onthe sample stage and the scanning direction and rotational deviation ofthe electron beam (step 708).

[0259] As already described in the items of the recipe formation, theoptical microscope image and SEM image at the position which haspreviously been designated as an alignment target are registered in thestoring device. The image name and the coordinates of the designatedalignment target have been registered in the step file.

[0260] When the alignment (step 708) is finished, the processing routineadvances to a calibrating step (step 709) of automatically adjusting thesignal amount of the wafer. The position where the calibration isexecuted and the set value of the proper brightness have previously beenregistered in the step file in the recipe formation. In the calibration,the SEM image of the registered coordinates is automatically obtained, abrightness histogram is obtained from the image data, and a gain valueand the like of the brightness are adjusted so as to be equal to thoseof a preset histogram. Thus, even if the signal level from the waferfluctuates or the sensitivity of the apparatus slightly fluctuates, thebrightness is always adjusted to substantially the same brightness everyinspection, so that the substantial sensitivity conditions areequalized.

[0261] When the calibration (step 709) is completed, the inspection(step 710) is started. The inspection region on the wafer, the regionwhere the repetitive pattern exists, and data such as a repetitive pitchin the repetitive pattern, namely, a comparing unit and the like havepreviously been registered in the kind file. The movement of the stageand the scan of the electron beam are executed by commands from thecontrol portion on the basis of the data.

[0262] In the flowchart of FIG. 27, whether the image at the defectposition is obtained again and visually confirmed after the end of theinspection or not can be designated (step 716).

[0263]FIG. 30 is a diagram of a picture plane in the inspecting mode andshows a picture plane to select whether the visual confirmation isperformed or not. As shown in FIG. 30, an option display region 907 isprovided, thereby enabling the inspection region, an output destinationof the result, and the operating conditions to be changed. A “changeoperating conditions” setting region 916 is displayed by clicking a“change operating conditions” button 915 in the option display region907.

[0264] The “manual” mode in the “change operating conditions” settingregion 916 is a mode to manually confirm the defect after the end of theinspection. When the inspection is finished, the apparatus enters awaiting state of an instruction from the operator and its message isdisplayed. An “automatic” mode is a mode in which the apparatusautomatically confirms the defect after the end of the inspection. Theimage of the defect portion which was automatically selected isautomatically obtained. A “not-done” mode is a mode in which the defectconfirmation is not performed after the end of the inspection. The“not-done” mode is designated in the case where the inspection result isstored and the defect confirmation is manually performed later or thelike.

[0265] When the “automatic” mode is set, the stage is moved to thecoordinates of the first one of the detected defects on the basis of thedesignation of this mode after the end of the inspection. After thestop, the electron beam is scanned to coordinates (X, Y) in a statewhere the stage stops, an image is obtained, and the image is displayedon the picture plane. This is because in the automatic inspection,although the coordinates and size of the detected defect are stored,since the image data of the defect portion is not stored, the operationto obtain the image again is necessary to obtain the image. In theembodiment, the operator classifies the contents on the basis of thedisplayed image of the defect and various information of the defect andinputs a classification code, so that the data can be outputted orstored into the outside in a state where the information of the defectclassification has been added in the defect data file.

[0266] As shown in the flowchart of FIG. 27, when the data of the map ofthe detected defects, the coordinates of the defects, and the like isprinted or outputted by means such as an external communication or thelike (step 712), the output contents and output destination can bepreviously designated at the start of the inspection.

[0267]FIG. 31 is a diagram of a picture plane in the inspecting mode andshows a picture plane to designate the output destination. When a“change result output destination” button 917 in the option displayregion 907 shown in FIG. 31 is clicked, a “change result outputdestination” setting region 918 is displayed. An output destination ofthe result can be designated in this region. As an output destination,there is an electronic medium such as magnetic disk, optical disk, orthe like, printing to a paper or the like, or a communication to theoutside. Any of them or a plurality of destinations among them can bedesignated. The printing or communication is instructed by clicking a“print” button 919 shown in the diagram.

[0268] The embodiment of the invention has a function for converting thecontents or a format of the data to be outputted into a desired formatin any output. Therefore, the data can be outputted to an upper datacollecting system. Similarly, data can be received in a desired formatfrom an upper system. Thus, the data of the defect inspected by theinspection apparatus of the embodiment can be collated with a result orthe like inspected by the other inspection apparatus or a part of theinspecting conditions can be downloaded. For example, the data of theshot and chip matrix on the wafer described in the paragraphs of therecipe formation mentioned above can be downloaded from a kind file ofthe other inspection apparatus which has already been set.

[0269] The sixth embodiment of the invention will now be described.

[0270]FIG. 32 is a diagram showing a picture plane in the defectconfirming mode.

[0271] If the automatic confirmation of the defect was set in the“change operating conditions” setting region 916 shown in FIG. 30, thepicture plane in the defect confirming mode is automatically displayedafter the display of the result. In the defect confirming mode pictureplane, the defect information as much as the maximum number of defectsis taken out from the defect data and displayed while sequentiallydisplaying the image of the relevant defect. The obtained image andinformation are outputted to the file as data for upper system.

[0272] In FIG. 32, the “confirm defect” button 107 is displayed in acolor different from that of the other buttons. The defect informationdisplay region 195 is arranged under the wafer map 155. A “defect ID”display region 196 to display the defect ID and a “classification code”display region 197 to display the classification code of the defect areprovided. In the diagram, by clicking the mark of the defect displayedin a different color on the wafer map 155 by the mouse or by inputtingthe defect ID into the “defect ID” display region 196, the SEM highmagnification image of the relevant portion is displayed in the imagedisplay portion 156 on the right side. The information of the relevantdefect is displayed in the defect information display region 195 underthe wafer map 155.

[0273] As for the defect confirming picture plane, either the imagephotographed by the optical microscope or the SEM image can beselectively displayed. In case of the optical microscope, the “opticalmicroscope” button 137 is clicked. In case of the low magnification ofthe SEM image, the “SEM low magnification” button 138 is clicked. Incase of the high magnification of the SEM image, the “SEM highmagnification” button 139 is clicked.

[0274] Consequently, since the defect image is simultaneously displayedon the side adjacent to the information of the defect region of thewafer which is being inspected, causes of the generation of the defectcan be easily predicted.

[0275] The display of the wafer map 155 is interlocked with the “defectID” display region 196 and the ID of the defect designated on the wafermap 155 is automatically displayed in the “defect ID” display region196. Contrarily, if the defect ID is inputted in the “defect ID” displayregion 196, the relevant position on the wafer map 155 is displayed in amarking state.

[0276] An arbitrary ID can be allocated separately from the defect IDwhich is automatically allocated to the extracted defect. The arbitraryID is inputted in a “sub ID” display region 925.

[0277] If the classification code of the relevant defect is known, it isinputted into the “classification code” display region.

[0278] By clicking a “set display filter” button 922, the display screenis switched to the defective filter instructing region 188 shown in FIG.26 and a limitation can be added to the display of the defect. Forexample, a range of the coordinates in the chip can be designated orlimited by the classification code. When a “sort” button 923 is clicked,for example, the defects can be rearranged in order of the size or areafrom the large value and sub IDs can be allocated in accordance with thesame order as the arranging order. When a “cluster classification”button 924 is clicked, the defects can be classified by cluster and aresult of the classification can be displayed and stored.

[0279] In a manner similar to the case of FIG. 26, by clicking the“adjust image” button 132 or “irradiating conditions” button 134 in theoption region 130, the SEM image can be adjusted and the defect can beobserved.

[0280]FIG. 33 is likewise a diagram showing a picture plane for defectconfirmation. By clicking an “execute” button 199 for defectconfirmation shown at the right edge in FIG. 32, the picture plane shownin FIG. 33 is displayed and the defect confirming process after theinspection is performed. By this picture plane, the defect positiondisplayed at present can be further emphasized or the data of thedefects on the wafer map 155 can be successively seen without waitingfor the display of the SEM image which is displayed in the image displayportion 156 on the right side, and the defect information can be rapidlyobtained.

[0281] Scales 901 and 902 are displayed on the display picture plane ofthe wafer map 155 and the display picture plane of the image displayportion 156 in which the SEM image is displayed, thereby enabling thesize of defect to be certainly grasped without a mistake even if theimage is enlarged.

[0282] An enlarging function of the wafer map 155 and a navigatingfunction of the displayed defect are shown. In FIG. 33, the chip or anarea in the chip can be arbitrarily enlarged by clicking an“enlarge/reduce” button 903. Thus, the defect position which isdisplayed on the wafer map 155 can be displayed without an overlap.

[0283] Upon designation of the chip or defect at this time, a front edgeof a navigation line 905 is positioned at the defect position byclicking a “navigation” button 904. Since the color of the defectposition is changed, the defect position displayed at present is furtheremphasized, thereby enabling it to be easily recognized. By theenlarging/reducing function, the operator can successively see thedefect information on the wafer map 155 and promptly confirm the defectinformation without waiting for the display of the SEM image which isdisplayed in the image display portion 156 on the right side.

[0284] When a chip display is set by clicking the “chip” button 141, thenumber of chips having defects is displayed.

[0285] In the flowchart of FIG. 27, after completion of the confirmationof the defect (step 711) and the output of the defect (step 712), thewafer is automatically unloaded (step 713) by pressing an “end” button920 shown in FIGS. 32 or 33. The inspection is finished.

[0286] By clicking the “cluster classification” button 924, the defectsare cluster classified and a result of the classification is displayed.With respect to the displayed defect, the classification is performed onthe basis of a defect discrimination for comparing the values of theposition (X coordinate, Y coordinate), size, brightness, shape, and theother defect characteristics with the values of the preset attributes.Although the details of the above discrimination and confirmation areomitted, they can be automatically or manually performed. If the defectscan be classified in accordance with the predetermined classification asmentioned above, in other words, when the classification is matched withthe predetermined classification, the SEM image is automaticallyobtained and displayed again. Subsequently, the inspection result isoutputted. When it is not matched with the classification or in case ofmanually obtaining and displaying again the SEM image as mentionedabove, the inspection result is outputted at this stage. When the outputof the inspection result is finished, the wafer is unloaded in the nextstep.

[0287] By this function, a specific defect can be extracted. The SEMimage obtained upon inspection has been stored in the file. The defectcan be confirmed again by displaying the filed SEM image again due tothe judgment of the operator.

[0288] The seventh embodiment of the invention will now be described.FIG. 34 is a diagram of a picture plane in the utility mode. The pictureplane shown in FIG. 34 is displayed by clicking the “utility” button 109in FIG. 33.

[0289] A file menu of the electronic optical adjustment,loading/unloading, file management, image management, time setting, andthe like is prepared as a function of the utility in a file menu displayregion 931. For example, a file management display region 933 isdisplayed by clicking a “file management” button 932. Besides thedisplay of the kind file and step file, a name is allocated to an imagefile of the stored inspection result and the named image file isdisplayed in the file management display region 933. When the imageshowing the inspection result is clicked and a “copy” button 934 isclicked, a copy display region 935 is displayed. In the copy displayregion 935, a sending destination of the designated image file can bedesignated. When a “PC input” mark 936 is designated, an image file froman external PC can be downloaded.

[0290] As mentioned above, in the embodiment according to the invention,since the items to decide the inspecting conditions are displayed in thepicture plane layers displayed in parallel, the efficiency of thegrasping of the whole flow and the progressing situation and theefficiency of the inputting procedure can be raised.

[0291] Since the display and progressing situation of the inspectingflow are visualized in the picture plane upon inspection, the presentsituation can be grasped in more detail and the operability in theinspecting operation and the recipe forming operation is remarkablyimproved.

[0292] The chip inspection, wafer extracting frequency inspection, anddefect inspection can be promptly performed while looking at the pictureplane. The defects in the whole product and the defects in a specificregion can be promptly detected. The fluctuation in processingconditions is certainly detected and fed back to the processes and canbe fed back to the adjustment of changing process steps or theadjustment of the payment budget.

[0293] The inspection defects in a fine pattern forming step after theresist development, a fine pattern forming step after the etching, and ahole pattern forming step after the cleaning can be promptly detected bydisplaying the picture plane.

[0294] By applying the inspection apparatus according to the inventionto a manufacturing process of a semiconductor device, a rapid defectdetection of high precision which cannot be performed in theconventional technique can be realized. That is, since an abnormality ofthe product, conditions, or the like can be found out early at highprecision by referring to the picture plane formed by picture planeforming and displaying means such as a monitor, an abnormalitycountermeasure process can be performed early to the substratemanufacturing process. Thus, a fraction defective of the semiconductordevice or the other substrate is reduced, the generation of a largequantity of failure can be prevented, and the productivity can beraised.

[0295] Further, since the generation of the failure itself can bereduced, the reliability of the product such as a semiconductor deviceor the like can be raised. A developing efficiency of a new product orthe like is also improved and the manufacturing costs can be reduced.

[0296] The eighth embodiment of the invention will now be described. Anexample of a system for collecting inspection data detected by theinspection apparatus of the invention and analyzing them will now bedescribed hereinbelow.

[0297]FIG. 35 is a step diagram of an inspection system. The steps incase of forming a semiconductor circuit pattern, an inspecting step inassociation with it, and an object of the inspection are shown. In thediagram, to form a semiconductor pattern, the following steps arepresumed: namely, “input” 1001; “step 1” 1002; “step 2”; . . . ; “stepn”; . . . , and “complete (electric test)” 1003. In this case, in “step2” or “step 3”, it is presumed that a specific “device 2” or “device 3”is used in addition to a “device 1”. An “inspect” 1004 is executed forthose steps. In the “inspect” 1004, an “inspecting step 1”, an“inspecting step 2”, an “inspecting step 3”, . . . , and an “inspectingstep n” are presumed for each step. By those inspections, with respectto the number of foreign matters or defects, a “discrimination aboutwhether the number of foreign matters or defects is not increased in thespecific step or not” 1005 is executed, an “arithmetic operation of acorrelation (setting of a managing level) between a yield (electrictest) and the defects” 1006 to arithmetically operate a correlationbetween a yield ratio which is obtained by an electric conductivity testas a final step and an increase ratio of the number of foreign mattersor defects is executed, and a “search (whether there is an abnormalityin a group which passed through a specific device or not) by the historyof the processing apparatus” 1007 for classifying the foreign matters ordefects on the basis of a result of the arithmetic operation and ahistory of each processing apparatus in each manufacturing step andspecifying a processing apparatus corresponding to the cause isexecuted.

[0298]FIG. 36 is a constructional diagram of an inspection systemcomprising various measuring devices, a data collection analyzingsystem, and a data transmitting and storing apparatus. A whole system1010 surrounded by a frame is fundamentally constructed by: a measuringdevice group 1011; a data collection analyzing system 1012; a bus 1013as a communication line; a QC data collecting system 1014; a tester 1015for electrically inspecting the semiconductor device; a server 1016; anda personal computer (PC) 1017 in an office.

[0299] For example, the measuring device group 1011 comprises: a reviewSEM 1021; a review station 1022; a foreign matter inspection apparatus1023; an appearance inspection apparatus 1024; a length measuring SEM1025; a matching precision measuring device 1026; a film thicknessmeasuring device 1027; and the like.

[0300] A foreign matter—appearance—classification result 1028 isoutputted from the review SEM 1021, review station 1022, foreign matterinspection apparatus 1023, and appearance inspection apparatus 1024 andinputted to the data collection analyzing system 1012 through the bus1013. Other QC data 1029 is outputted from the length measuring SEM1025, matching precision measuring device 1026, and film thicknessmeasuring device 1027 and inputted to the QC data collecting system 1014through the bus 1013 together with a result of a test from the tester1015.

[0301] The data collection analyzing system 1012 comprises: a computer1031; a foreign matter—appearance storage file 1032 associatedtherefore; and an image file 1033. An output data of the data collectionanalyzing system 1012 is stored into the server 1016. The server 1016stores the data for a predetermined period. The QC data collectingsystem 1014 comprises: a computer 1034; an FBM data FBM analysis file1035; and a QC data electric test file 1036 regarding an electric test.

[0302] The server 1016 stores data 1037 of “yield, electric testcategory, history of processing apparatus, size, film thickness, foreignmatter (mirror surface), matching precision, withstanding voltage,foreign matter—appearance”. The personal computer 1017 in an officefetches the data from the server 1016 and uses it for various searches,analysis, and report forming process.

[0303]FIG. 37 is a constructional diagram of an inspection systemshowing the details of a part of FIG. 36. When there is no inspectionapparatus in the manufacturing steps of a semiconductor device,electrical characteristics are inspected by the tester 1015 at a pointwhen the semiconductor device is completed. When there is anabnormality, causes of the abnormality are examined by devices forhigh-resolution SEM, AES analysis, and TEM observation of a system 1041.Since the abnormality is found for the first time at a point when thesemiconductor device is completed and, thereafter, causes of theabnormality are examined, it takes a long period of time of one to twomonths until the causes are investigated and its countermeasure istaken. On the other hand, since a proper inspection is performed betweenthe respective steps and an abnormality is found out early every stepand its countermeasure is taken, there is a large effect in improvementof a manufacturing yield of the semiconductor device.

[0304] As a foreign matter—appearance inspection result 1028 a, themeasuring conditions, the number of foreign matters, the number ofdefects, size, coordinates, and the like are inputted to the datacollection analyzing system 1012. The yield and FBM coordinates areinputted from the QC data collecting system 1014 to the data collectionanalyzing system 1012.

[0305] For example, the positions of the foreign matters or defects,namely, coordinates as foreign matter—appearance—classification result1028 detected by the appearance inspection apparatus 1024 shown in FIG.36 are very useful in case of searching the foreign matter or defect bythe review SEM 1021 shown in FIG. 37 or in case of working an FIB crosssection in order to observe by an SIM/SEM observing apparatus 1038. Ifthere are common coordinates between both apparatuses or there is acompatibility of the coordinates, the position of the foreign matter ordefect can be easily searched. If a marking indicative of the positionof the foreign matter or defect is written by the appearance inspectionapparatus 1024 to a near location or the like where the position of theforeign matter or defect can be easily found, it is also useful tosearch the position in case of searching in reviewing the defect by thereview SEM 1021 or working a cross section by an FIB.

[0306] When it is determined that the cutting-out of the observingportion and analyzing portion is necessary as a result of using thereview SEM 1021, results in the high resolution SEM, AES analysis, andTEM observation of the system 1041 are inputted into the data collectionanalyzing system 1012 as “image—classification result—analysis result”together with the coordinates of the foreign matter or defect. Thecollected and analyzed data is fed back and used for the foregoingdiscrimination regarding the necessity of the cutting-out of theobserving portion and analyzing portion.

[0307]FIG. 1 is a constructional diagram of an inspection system similarto FIG. 36. The appearance inspection apparatus 1024 is divided into anexternal apparatus 1024 a such as an optical inspection apparatus and anSEM type inspection apparatus 1024 b which is used in the invention.With this construction, information from the external inspectionapparatus 1024 a and information from the upper system can be inputtedto the SEM type inspection apparatus 1024 b and both the obtainedexternal information and a result of the SEM type inspection apparatus1024 b can be compared on the picture plane. Thus, defect informationwhich could not be discriminated by only the external apparatus 1024 asuch as an optical inspection apparatus or defect information whichcould not be discriminated by only the SEM type inspection apparatus1024 b is displayed on the picture plane or the defect informationobtained from both of the apparatuses is overlappingly displayed on thepicture plane, and the inspection of a circuit pattern of higherprecision can be expected. In such a case, if the system is constructedso that the defect information obtained by which one of the apparatusescan be easily visually recognized by displaying both defect informationin different colors or different manners, they can be further easilydiscriminated.

[0308] In this example as well, if the system is constructed in a mannersuch that the coordinates of the external apparatus 1024 a such as anoptical inspection apparatus or the SEM type inspection apparatus 1024 bwhich is used in the invention and the coordinates of the review SEM1021 are made common or easy to be converted, the position of the defectsuch as foreign matter, pattern defect, or the like can be easilysearched by the review SEM 1021. Or, by marking in a manner such thatthe position of the defect such as foreign matter, pattern defect, orthe like can be known by the external apparatus 1024 a such as anoptical inspection apparatus or the SEM type inspection apparatus 1024 bwhich is used in the invention, the position of the defect such asforeign matter, pattern defect, or the like can be easily searched bythe review SEM 1021.

[0309] According to the embodiment mentioned above, by applying theinspection apparatus according to the invention to the manufacturingprocess of the semiconductor device, the defect which could not bedetected by the conventional technique, namely, the abnormality in theproduct device, conditions, or the like can be found out early at highprecision with reference to the picture plane formed by the pictureplane forming and displaying means. Since it is possible to analyze inthe upper system by using a proper device, a countermeasure processagainst the abnormality can be promptly performed for the manufacturingprocess of the semiconductor device. Thus, a fraction defective of thesemiconductor device can be reduced and the productivity can be raised.Since the occurrence of an abnormality can be rapidly detected, thegeneration of many failures can be prevented. Further, since thegeneration of the failure itself can be consequently reduced, thereliability of the semiconductor device or the like can be raised.Therefore, a developing efficiency of a new product or the like isimproved and the manufacturing costs can be reduced.

[0310] According to the inspection apparatus described so far, in theinspection apparatus in which the electron beam image is compared andinspected and a microdefect generated on the fine circuit pattern isdetected, the inspection and the operation to decide the inspectingconditions can be efficiently performed. Thus, when the inspectingconditions of a number of semiconductor products in a number ofprocessing steps are set, the inspecting conditions can be immediatelyset and registered in a short time without delaying the inspection.Therefore, the time which is required for the operator to inspect can besaved. The waiting time for the product which is required until thecauses of the defect in the manufacturing process are investigated canbe fairly reduced. The time which is required to detect the generationof a failure can be also remarkably reduced.

[0311] By applying the inspection apparatus according to the inventionto the manufacturing process of the semiconductor device such as asemiconductor element or the like, not only a defect can be detected ata high sensitivity but also a setting efficiency in case of setting aninspection applying step and setting the inspecting conditions by usingthe wafer in such a step can be improved. Thus, the waiting time for thewafer in the inspecting step is eliminated and the generation of theserious abnormality can be detected early. A countermeasure processagainst the abnormality can be performed early in the failure generatingstep and the working conditions can be optimized so as not to generatethe failures.

[0312] For example, in the circuit pattern inspecting step after thedeveloping step, if a defect or breaking of a photoresist pattern isdetected, a situation such that exposing conditions or focusingconditions of an exposing apparatus in the sensitizing step before thedeveloping step are not optimum is presumed. Therefore, a countermeasuresuch as an adjustment of the focusing conditions or an exposure amountor the like can be rapidly taken.

[0313] Whether the detected defects have occurred in common among theshots or not is discriminated from the defect distribution, therebyenabling a defect of a photomask or reticle which is used for thepattern formation to be presumed. Thus, the inspection or exchange ofthe photomask or reticle can be rapidly executed.

[0314] As mentioned above, by applying the inspection method andinspection apparatus for the circuit pattern according to the inventionto the manufacturing process of the substrate of the semiconductordevice or the like and executing the inspecting step in the halfway ofthe manufacturing process, various defects can be detected. Causes ofthe abnormality in each manufacturing step can be rapidly presumed inaccordance with the contents of the detected defect.

[0315] As an example of the application of the above inspection, theinspection can be applied by a method, which will be explainedhereinbelow, in the wafer manufacturing line.

[0316] First, as for the inspection region, in the inspection of amemory product, since an area occupied by a memory cell in the wafer isrelatively large, it is considered to selectively use only the memorycell in accordance with the step or purpose in a manner such that onlythe memory cell is set to the inspection region, the memory cell and itsperipheral circuit are inspected or the whole chip is inspected. On theother hand, as for a logic product, since there is a product in which anoccupied area of a memory portion in the chip is small or a product inwhich no memory portion exists, the whole chip is inspected in manycases. However, only a specific pattern region in the chip is inspectedor, contrarily, a region excluding the specific pattern is inspected asnecessary.

[0317] In a semiconductor product in which the memory portion and thelogic portion are mixed, it is considered that an inspection of a highsensitivity is executed on a repetitive unit basis of the memory cell inthe memory cell portion and a comparison inspection of the chips isexecuted in the other portions. Subsequently, as for the setting of theinspection-subject chip in the wafer, if the operator wants to grasp adistribution of the whole wafer and a detailed level of each chip, thewhole wafer (100%) is set to the inspection region.

[0318] In the inspection of the whole wafer, however, since a time in arange from a few hours to tens of hours is required, a number of waferscannot be inspected. In the grasping of the ordinary level, theprocessing fluctuation or the abnormality generation can be detected byinspecting the region of 10 to 50% of the whole region in the wafer. Asmethods of setting the region in the wafer, there are a method ofselecting inspection-subject chips at random, a method of selecting aspecific chip column or row arranged on the wafer, a method of changinga sampling rate at which the region in the chip is scanned, further, amethod of combining the chip selection and the setting of the samplingrate, and the like.

[0319] For example, in case of a purpose of grasping the distribution ofthe whole wafer in the inspection, it is proper to set all chips toinspection-subject chips and change the sampling rate in order to set adesired inspection time. When the operator wants to finish theinspection within one to two hours, it is desirable to set the samplingrate to 25% or less. When the operator wants to specify a chip and graspa defect level per chip, it is preferable to select a few chips andinspect them at a sampling rate of 100%. In this manner, variousinspection regions can be set in accordance with the object of theinspection.

[0320] Further, with respect to at which degree of frequency the wafersof a plurality of products and steps which need the inspection areinspected, for example, since a method of optimizing the conditionswhile changing various processing conditions is considered in thedevelopment of the semiconductor products, it is desirable to performthe inspection each time the conditions are changed.

[0321] On the other hand, if the processing conditions have been almostdetermined, it is desirable to inspect about a few wafers per week amongthe wafers of the products and steps which need the inspection andinspect them when the processing conditions are changed.

[0322] Further, in the manufacturing line of the stable process, afluctuation and a level of the manufacturing process can be grasped byexecuting the inspection of about “one wafer/week—product—step”.However, a wafer extracting inspection other than the above methods canbe executed in accordance with the object.

[0323] As mentioned above, in the manufacturing process of thesemiconductor device, by executing the inspection method and apparatusfor the circuit pattern according to the invention in an in-line manner,the fluctuation of various manufacturing conditions and the generationof the abnormality can be detected within the inspection real time, sothat the generation of a large quantity of failures can be prevented. Byapplying the inspection method and apparatus for the circuit patternaccording to the invention, the inspecting conditions of theinspection-subject wafer can be efficiently and accurately determinedwithin a short time. Thus, since the inspection of higher precision canbe applied, the generation of failure can be detected at a highsensitivity. Since the time that is required to decide the inspectingconditions can be remarkably reduced, the waiting time of the productand the occupying time of the operator can be reduced. Since the failurecan be detected earlier than the conventional inspecting method andapparatus, the productivity of the semiconductor device can be raised.

[0324] In the circuit pattern inspection apparatus according to theinvention, the inspection result can be collated or a correlationevaluation can be embodied as necessary, and data can be searched fromeach terminal (personal computer or the like). Further, when a defect isdetected, information at the defect generating position is searched,various analyses are executed by a failure analyzing apparatus, andresults of the analyses can be further stored.

[0325] The inspection apparatuses and analyzing apparatuses other thanthose mentioned in the embodiments can be connected to the datacollection analyzing system and it is presumed that the inspectionapparatuses mentioned in the embodiments are also connected.

[0326] With respect to the construction of the typical apparatus andinspection method for the circuit pattern of the invention, there havebeen described above the partial embodiments of: the method ofirradiating the electron beam and obtaining the electron beam image at ahigh speed and comparing and inspecting; the flow of the specificinspection and the flow for deciding the operation and inspectingconditions of each portion; the operation picture plane and operatingmethods for the inspection and the setting of the inspecting conditions;the layers of the picture plane to set the inspecting conditions; thesemiconductor device due to the execution of the inspection of thecircuit pattern according to the invention; the method of improving theproductivity of the other manufacturing process of the substrate havingthe circuit pattern; and the like. However, other inspection methods andapparatuses constructed by a combination of a plurality of featuresmentioned in Claims are possible within the scope of Claims of theinvention.

[0327] According to the invention as described above, in case ofinspecting the fine circuit pattern by using the image formed byirradiating the white light, laser beam, or charged particle beam, theinspection method, apparatus, and system for the circuit pattern, inwhich when various conditions necessary for inspection are set, itsoperating efficiency can be improved can be obtained.

[0328] The inspection method, apparatus, and system for the circuitpattern having the operation picture plane displaying method oroperation picture plane layout to improve the operability upon settingof the inspecting conditions can be obtained.

[0329] The inspection method, apparatus, and system for the circuitpattern, in which the inspection time can be reduced and themanufacturing yield can be improved by the early investigation of thecauses of failures of the semiconductor device can be obtained.

What is claimed is:
 1. An inspection apparatus for a circuit pattern,comprising: an irradiating apparatus which is constructed by a pluralityof lenses and irradiates light, a laser beam, or a charged particle beamonto a surface of a substrate on which a circuit pattern has beenformed; a detector for detecting a signal which is generated from saidsubstrate; a memory for storing the signal detected by said detector andvisualized as an image; a comparing apparatus for comparing said storedsignal with a signal obtained by visualizing a corresponding comparisonpattern in another region as an image; a discriminating apparatus fordiscriminating a defect on said circuit pattern from a result ofcomparison in said comparing apparatus; a monitor; and a processorprogrammed to selectively display on a region of said monitor aninspecting condition picture plane for displaying or inputtinginspecting conditions setting region which is a stripe-like or belt-likeregion irradiated by said light, said laser beam, or said chargedparticle beam.
 2. A inspection apparatus for a circuit pattern,comprising; an irradiating apparatus which is constructed by a pluralityof lenses and irradiates light, a laser beam, or a charged particle beamonto a surface of a substrate on which a circuit pattern has beenformed; a detector for detecting a signal which is generated from saidsubstrate; a memory for storing the signal detected by said detector andvisualized as an image; a comparing apparatus for comparing said storedsignal with a signal obtained by visualizing a corresponding comparisonpattern in another region as an image; a discriminating apparatus fordiscriminating a defect on said circuit pattern from a result ofcomparison in said comparing apparatus; a monitor; and a processorprogrammed to selectively display on a region of said monitor aninspecting condition picture plane for displaying or inputtinginspecting conditions setting region which is thinned out in theinspection.
 3. An inspection apparatus for circuit pattern, comprising:an irradiating apparatus which is constructed by a plurality of lensesand irradiates light, a laser beam, or a charged particle beam onto asurface of a substrate on which a circuit pattern has been formed; adetector for detecting a signal which is generated from said substrate;a memory for storing the signal detected by said detector and visualizedas an image; a comparing apparatus for comparing said stored signal witha signal obtained by visualizing a corresponding comparison pattern inanother region as an image; a discriminating apparatus fordiscriminating a defect on said circuit pattern from a result ofcomparison said comparing apparatus; a monitor; and a processorprogrammed to selectively display on a region of said monitor aninspecting picture plane for displaying a region which is a stripe-likeor belt-like region irradiated by said light, said laser beam, or saidcharged particle beam.
 4. An inspection apparatus for a circuit pattern,comprising: an irradiating apparatus which is constructed by a pluralityof lenses and irradiates light, a laser beam, or a charged particle beamonto a surface of a substrate on which a circuit pattern has beenformed; a detector for detecting a signal which is generated from saidsubstrate; a memory for storing the signal detected by said detector andvisualized as an image; a comparing apparatus for comparing said storedsignal with a signal obtained by visualizing a corresponding comparisonpattern in another region as an image; a discriminating apparatus fordiscriminating a defect on said circuit pattern from a result ofcomparison in said comparing apparatus; a monitor; and a processorprogrammed to selectively display on a region of said monitor aninspecting picture plane for displaying a region which is thinned out inthe inspection.
 5. An inspection apparatus for circuit pattern,comprising: an irradiating apparatus which is constructed by a pluralityof lenses and irradiates light, a laser beam, or a charged particle beamonto a surface of a substrate on which a circuit pattern has beenformed; a detector for detecting a signal which is generated from saidsubstrate; a memory for storing the signal detected by said detector andvisualized as an image; a comparing apparatus for comparing said storedsignal with a signal obtained by visualizing a corresponding comparisonpattern in another region as an image; a discriminating apparatus fordiscriminating a defect on said circuit pattern from a result ofcomparison in said comparing apparatus; and a monitor displaying aresult of the discriminating.
 6. An inspection apparatus for circuitpattern, comprising: an irradiating apparatus which is constructed by aplurality of lenses and irradiates light, a laser beam, or a chargedparticle beam onto a region thinned out in the inspection of a substrateon which a circuit pattern has been formed; a detector for detecting asignal which is generated from said substrate; a memory for storing thesignal detected by said detector and visualized as an image; a comparingapparatus for comparing said stored signal with a signal obtained byvisualizing a corresponding comparison pattern in another region as animage; a discriminating apparatus for discriminating a defect on saidcircuit pattern from a result of comparison in said comparing apparatus;and a monitor displaying a result of the discriminating.